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Part Details for BSM100GAL120DLCK by Infineon Technologies AG
Overview of BSM100GAL120DLCK by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Part Details for BSM100GAL120DLCK
BSM100GAL120DLCK CAD Models
BSM100GAL120DLCK Part Data Attributes:
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BSM100GAL120DLCK
Infineon Technologies AG
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Datasheet
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BSM100GAL120DLCK
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-5 | |
| Pin Count | 5 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 205 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 830 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 480 ns | |
| Turn-on Time-Nom (ton) | 110 ns | |
| VCEsat-Max | 2.6 V |
Alternate Parts for BSM100GAL120DLCK
This table gives cross-reference parts and alternative options found for BSM100GAL120DLCK. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM100GAL120DLCK, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APTGT200DA120D3G | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | BSM100GAL120DLCK vs APTGT200DA120D3G |
| BSM150GAL120DLC | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM100GAL120DLCK vs BSM150GAL120DLC |
| BSM200GAL120DL | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE | Eupec Gmbh & Co Kg | BSM100GAL120DLCK vs BSM200GAL120DL |
| GP200MKS12 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel | Dynex Semiconductor | BSM100GAL120DLCK vs GP200MKS12 |
| GP200MLS12 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel | Dynex Semiconductor | BSM100GAL120DLCK vs GP200MLS12 |
| BSM150GAL120DN2 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM100GAL120DLCK vs BSM150GAL120DN2 |
| CM100E3U-24H | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | BSM100GAL120DLCK vs CM100E3U-24H |
| BSM150GAL120DN2 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM100GAL120DLCK vs BSM150GAL120DN2 |
| BSM100GAL120DN2 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM100GAL120DLCK vs BSM100GAL120DN2 |
| FD200R12KE3HOSA1 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM100GAL120DLCK vs FD200R12KE3HOSA1 |