Part Details for BSM150GAL120DLC by Infineon Technologies AG
Overview of BSM150GAL120DLC by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for BSM150GAL120DLC
BSM150GAL120DLC CAD Models
BSM150GAL120DLC Part Data Attributes:
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BSM150GAL120DLC
Infineon Technologies AG
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Datasheet
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BSM150GAL120DLC
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | MODULE-5 | |
Pin Count | 5 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 300 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Temperature-Max | 125 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1200 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 650 ns | |
Turn-on Time-Nom (ton) | 190 ns | |
VCEsat-Max | 2.6 V |
Alternate Parts for BSM150GAL120DLC
This table gives cross-reference parts and alternative options found for BSM150GAL120DLC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM150GAL120DLC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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GP200MKS12 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel | Dynex Semiconductor | BSM150GAL120DLC vs GP200MKS12 |
BSM150GAL120DN2 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM150GAL120DLC vs BSM150GAL120DN2 |
FD150R12RT4 | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM150GAL120DLC vs FD150R12RT4 |
BSM150GAL120DN2 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM150GAL120DLC vs BSM150GAL120DN2 |
BSM100GAL120DLCKHOSA1 | Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM150GAL120DLC vs BSM100GAL120DLCKHOSA1 |
BSM100GAL120DLCK | Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM150GAL120DLC vs BSM100GAL120DLCK |
BSM200GAL120DL | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE | Eupec Gmbh & Co Kg | BSM150GAL120DLC vs BSM200GAL120DL |
APTGT200DA120D3 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Microsemi Corporation | BSM150GAL120DLC vs APTGT200DA120D3 |
FD200R12KE3HOSA1 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM150GAL120DLC vs FD200R12KE3HOSA1 |
BSM200GAR120DN2 | Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM150GAL120DLC vs BSM200GAR120DN2 |