Datasheets
CM100E3U-24H by:

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel,

Part Details for CM100E3U-24H by Mitsubishi Electric

Overview of CM100E3U-24H by Mitsubishi Electric

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Price & Stock for CM100E3U-24H

Part # Distributor Description Stock Price Buy
DISTI # 31C0178
Newark Igbt, Module, 1.2Kv, 100A, Continuous Collector Current:100A, Collector Emitter Saturation Voltage:1.2Kv, Power Dissipation:650W, Operating Temperature Max:150°C, Igbt Termination:Stud, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: No |Mitsubishi Electric CM100E3U-24H Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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Part Details for CM100E3U-24H

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CM100E3U-24H Part Data Attributes:

CM100E3U-24H Mitsubishi Electric
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CM100E3U-24H Mitsubishi Electric Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel,
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature SUPER FAST RECOVERY
Case Connection ISOLATED
Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X5
Number of Elements 1
Number of Terminals 5
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 650 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 300 ns
Turn-on Time-Nom (ton) 100 ns
VCEsat-Max 3.7 V

Alternate Parts for CM100E3U-24H

This table gives cross-reference parts and alternative options found for CM100E3U-24H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM100E3U-24H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CM100E3U-24H Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, Powerex Power Semiconductors CM100E3U-24H vs CM100E3U-24H
Part Number Description Manufacturer Compare
GP200MKS12 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel Dynex Semiconductor CM100E3U-24H vs GP200MKS12
BSM150GAL120DN2 Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG CM100E3U-24H vs BSM150GAL120DN2
FD150R12RT4 Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG CM100E3U-24H vs FD150R12RT4
BSM150GAL120DN2 Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel Siemens CM100E3U-24H vs BSM150GAL120DN2
BSM100GAL120DLCKHOSA1 Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG CM100E3U-24H vs BSM100GAL120DLCKHOSA1
BSM100GAL120DLCK Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG CM100E3U-24H vs BSM100GAL120DLCK
BSM200GAL120DL Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE Eupec Gmbh & Co Kg CM100E3U-24H vs BSM200GAL120DL
APTGT200DA120D3 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Microsemi Corporation CM100E3U-24H vs APTGT200DA120D3
FD200R12KE3HOSA1 Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG CM100E3U-24H vs FD200R12KE3HOSA1
BSM200GAR120DN2 Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG CM100E3U-24H vs BSM200GAR120DN2

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