Part Details for FD200R12KE3HOSA1 by Infineon Technologies AG
Overview of FD200R12KE3HOSA1 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FD200R12KE3HOSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
43AC3132
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Newark | Igbt Module, N-Ch, 1.2Kv, 295A, Transistor Polarity:N Channel, Dc Collector Current:295A, Collector Emitter Saturation Voltage Vce(On):1.7V, Power Dissipation Pd:1.05Kw, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FD200R12KE3HOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$99.0300 / $114.5000 | Buy Now |
DISTI #
448-FD200R12KE3HOSA1-ND
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DigiKey | IGBT MODULE 1200V 1050W Min Qty: 1 Lead time: 16 Weeks Container: Tray | Temporarily Out of Stock |
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$113.1088 / $132.8600 | Buy Now |
DISTI #
FD200R12KE3HOSA1
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Avnet Americas | MEDIUM POWER 62MM - Trays (Alt: FD200R12KE3HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$137.7640 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tray | 0Tray |
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$123.4500 | Buy Now |
DISTI #
SP000083495
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EBV Elektronik | MEDIUM POWER 62MM (Alt: SP000083495) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FD200R12KE3HOSA1
FD200R12KE3HOSA1 CAD Models
FD200R12KE3HOSA1 Part Data Attributes:
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FD200R12KE3HOSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FD200R12KE3HOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | FLANGE MOUNT, R-XUFM-X5 | |
Pin Count | 5 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 295 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
JESD-30 Code | R-XUFM-X5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 830 ns | |
Turn-on Time-Nom (ton) | 400 ns |
Alternate Parts for FD200R12KE3HOSA1
This table gives cross-reference parts and alternative options found for FD200R12KE3HOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FD200R12KE3HOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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GP200MKS12 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel | Dynex Semiconductor | FD200R12KE3HOSA1 vs GP200MKS12 |
BSM150GAL120DN2 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | FD200R12KE3HOSA1 vs BSM150GAL120DN2 |
FD150R12RT4 | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | FD200R12KE3HOSA1 vs FD150R12RT4 |
BSM150GAL120DN2 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel | Siemens | FD200R12KE3HOSA1 vs BSM150GAL120DN2 |
BSM100GAL120DLCKHOSA1 | Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | FD200R12KE3HOSA1 vs BSM100GAL120DLCKHOSA1 |
BSM100GAL120DLCK | Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | FD200R12KE3HOSA1 vs BSM100GAL120DLCK |
BSM200GAL120DL | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE | Eupec Gmbh & Co Kg | FD200R12KE3HOSA1 vs BSM200GAL120DL |
APTGT200DA120D3 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Microsemi Corporation | FD200R12KE3HOSA1 vs APTGT200DA120D3 |
BSM200GAR120DN2 | Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | FD200R12KE3HOSA1 vs BSM200GAR120DN2 |
APTGT200DA120D3G | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | FD200R12KE3HOSA1 vs APTGT200DA120D3G |