Part Details for BSM200GAL120DL by Eupec Gmbh & Co Kg
Overview of BSM200GAL120DL by Eupec Gmbh & Co Kg
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for BSM200GAL120DL
BSM200GAL120DL CAD Models
BSM200GAL120DL Part Data Attributes:
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BSM200GAL120DL
Eupec Gmbh & Co Kg
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Datasheet
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BSM200GAL120DL
Eupec Gmbh & Co Kg
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | EUPEC GMBH & CO KG | |
Package Description | MODULE | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 200 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | |
JESD-30 Code | R-PXFM-X | |
Number of Elements | 2 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UNSPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON |
Alternate Parts for BSM200GAL120DL
This table gives cross-reference parts and alternative options found for BSM200GAL120DL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM200GAL120DL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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GP200MKS12 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel | Dynex Semiconductor | BSM200GAL120DL vs GP200MKS12 |
BSM150GAL120DN2 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM200GAL120DL vs BSM150GAL120DN2 |
FD150R12RT4 | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM200GAL120DL vs FD150R12RT4 |
BSM150GAL120DN2 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM200GAL120DL vs BSM150GAL120DN2 |
BSM100GAL120DLCKHOSA1 | Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM200GAL120DL vs BSM100GAL120DLCKHOSA1 |
BSM100GAL120DLCK | Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM200GAL120DL vs BSM100GAL120DLCK |
APTGT200DA120D3 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Microsemi Corporation | BSM200GAL120DL vs APTGT200DA120D3 |
FD200R12KE3HOSA1 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM200GAL120DL vs FD200R12KE3HOSA1 |
BSM200GAR120DN2 | Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM200GAL120DL vs BSM200GAR120DN2 |
APTGT200DA120D3G | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | BSM200GAL120DL vs APTGT200DA120D3G |