Datasheets
BSM200GAL120DL by:

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE

Part Details for BSM200GAL120DL by Eupec Gmbh & Co Kg

Overview of BSM200GAL120DL by Eupec Gmbh & Co Kg

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Part Details for BSM200GAL120DL

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BSM200GAL120DL Part Data Attributes:

BSM200GAL120DL Eupec Gmbh & Co Kg
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BSM200GAL120DL Eupec Gmbh & Co Kg Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE
Part Life Cycle Code Obsolete
Ihs Manufacturer EUPEC GMBH & CO KG
Package Description MODULE
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 200 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-PXFM-X
Number of Elements 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UNSPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON

Alternate Parts for BSM200GAL120DL

This table gives cross-reference parts and alternative options found for BSM200GAL120DL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM200GAL120DL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
GP200MKS12 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel Dynex Semiconductor BSM200GAL120DL vs GP200MKS12
BSM150GAL120DN2 Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG BSM200GAL120DL vs BSM150GAL120DN2
FD150R12RT4 Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG BSM200GAL120DL vs FD150R12RT4
BSM150GAL120DN2 Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel Siemens BSM200GAL120DL vs BSM150GAL120DN2
BSM100GAL120DLCKHOSA1 Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG BSM200GAL120DL vs BSM100GAL120DLCKHOSA1
BSM100GAL120DLCK Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG BSM200GAL120DL vs BSM100GAL120DLCK
APTGT200DA120D3 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Microsemi Corporation BSM200GAL120DL vs APTGT200DA120D3
FD200R12KE3HOSA1 Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG BSM200GAL120DL vs FD200R12KE3HOSA1
BSM200GAR120DN2 Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG BSM200GAL120DL vs BSM200GAR120DN2
APTGT200DA120D3G Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc BSM200GAL120DL vs APTGT200DA120D3G

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