Part Details for BSM100GAL120DN2 by Siemens
Overview of BSM100GAL120DN2 by Siemens
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Part Details for BSM100GAL120DN2
BSM100GAL120DN2 CAD Models
BSM100GAL120DN2 Part Data Attributes:
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BSM100GAL120DN2
Siemens
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Datasheet
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BSM100GAL120DN2
Siemens
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SIEMENS A G | |
| Package Description | FLANGE MOUNT, R-CUFM-X7 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 150 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 100 ns | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-CUFM-X7 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 800 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 160 ns | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | GENERAL PURPOSE | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 600 ns | |
| Turn-off Time-Nom (toff) | 400 ns | |
| Turn-on Time-Max (ton) | 260 ns | |
| Turn-on Time-Nom (ton) | 130 ns | |
| VCEsat-Max | 3.7 V |
Alternate Parts for BSM100GAL120DN2
This table gives cross-reference parts and alternative options found for BSM100GAL120DN2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM100GAL120DN2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| GP200MKS12 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel | Dynex Semiconductor | BSM100GAL120DN2 vs GP200MKS12 |
| BSM150GAL120DN2 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM100GAL120DN2 vs BSM150GAL120DN2 |
| FD150R12RT4 | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM100GAL120DN2 vs FD150R12RT4 |
| BSM150GAL120DN2 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM100GAL120DN2 vs BSM150GAL120DN2 |
| BSM100GAL120DLCKHOSA1 | Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM100GAL120DN2 vs BSM100GAL120DLCKHOSA1 |
| BSM100GAL120DLCK | Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM100GAL120DN2 vs BSM100GAL120DLCK |
| BSM200GAL120DL | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE | Eupec Gmbh & Co Kg | BSM100GAL120DN2 vs BSM200GAL120DL |
| APTGT200DA120D3 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Microsemi Corporation | BSM100GAL120DN2 vs APTGT200DA120D3 |
| FD200R12KE3HOSA1 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM100GAL120DN2 vs FD200R12KE3HOSA1 |
| BSM200GAR120DN2 | Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM100GAL120DN2 vs BSM200GAR120DN2 |