Part Details for GP200MKS12 by Dynex Semiconductor
Overview of GP200MKS12 by Dynex Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for GP200MKS12
GP200MKS12 CAD Models
GP200MKS12 Part Data Attributes
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GP200MKS12
Dynex Semiconductor
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Datasheet
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GP200MKS12
Dynex Semiconductor
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | DYNEX SEMICONDUCTOR LTD | |
| Package Description | FLANGE MOUNT, R-XUFM-X6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 200 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 800 ns | |
| Turn-on Time-Nom (ton) | 610 ns |
Alternate Parts for GP200MKS12
This table gives cross-reference parts and alternative options found for GP200MKS12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GP200MKS12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FD200R12KE3HOSA1 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | GP200MKS12 vs FD200R12KE3HOSA1 |
| BSM100GAL120DLCK | Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | GP200MKS12 vs BSM100GAL120DLCK |
| BSM100GAL120DN2 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel | Siemens | GP200MKS12 vs BSM100GAL120DN2 |
| BSM150GAL120DN2 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | GP200MKS12 vs BSM150GAL120DN2 |
| FD200R12KE3 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | GP200MKS12 vs FD200R12KE3 |
| FD150R12RT4HOSA1 | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | GP200MKS12 vs FD150R12RT4HOSA1 |
| BSM200GAL120DN2 | Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel | Siemens | GP200MKS12 vs BSM200GAL120DN2 |
| CM100E3U-24H | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | GP200MKS12 vs CM100E3U-24H |
| BSM150GAL120DN2 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel | Siemens | GP200MKS12 vs BSM150GAL120DN2 |
| APTGT200DA120D3G | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | GP200MKS12 vs APTGT200DA120D3G |