BSM100GAL120DLCK vs GP200MKS12 feature comparison

BSM100GAL120DLCK Infineon Technologies AG

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GP200MKS12 Dynex Semiconductor

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG DYNEX SEMICONDUCTOR LTD
Part Package Code MODULE
Package Description MODULE-5 FLANGE MOUNT, R-XUFM-X6
Pin Count 5
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED ISOLATED
Collector Current-Max (IC) 205 A 200 A
Collector-Emitter Voltage-Max 1200 V 1200 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X5 R-XUFM-X6
Number of Elements 1 1
Number of Terminals 5 6
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 830 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form UNSPECIFIED UNSPECIFIED
Terminal Position UPPER UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 480 ns 800 ns
Turn-on Time-Nom (ton) 110 ns 610 ns
VCEsat-Max 2.6 V
Base Number Matches 2 1

Compare BSM100GAL120DLCK with alternatives

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