Parametric results for: Power Bipolar Transistors

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Sorted By: Polarity/Channel Type
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SIA432DJ-T4-GE3
Vishay Intertechnologies
Check for Price Yes Yes Active N-CHANNEL YES SINGLE 1 12 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 19.2 W 150 °C NOT SPECIFIED NOT SPECIFIED VISHAY INTERTECHNOLOGY INC , compliant EAR99
IPS65R1K4C6AKMA1
Infineon Technologies AG
$0.5471 No Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 650 V 1 3.2 A 1.4 Ω 26 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28 W 8.3 A SWITCHING SILICON TO-251 R-PSIP-T3 e3 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR IN-LINE Tin (Sn) THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG IPAK-3 not_compliant EAR99 Infineon
SIA432DJ-T1-GE3
Vishay Siliconix
$0.7466 Active N-CHANNEL YES SINGLE 3 1 12 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 19.2 W S-PDSO-C3 e3 Not Qualified 150 °C 260 PLASTIC/EPOXY SQUARE SMALL OUTLINE MATTE TIN C BEND DUAL VISHAY SILICONIX SMALL OUTLINE, S-PDSO-C3 unknown EAR99 Vishay SC-70 6
IPC70N04S5L-4R2
Infineon Technologies AG
$0.4722 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 40 V 1 70 A 6.1 mΩ 32 mJ 30 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 50 W 280 A SILICON R-PDSO-F8 e3 AEC-Q101 1 175 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) FLAT DUAL INFINEON TECHNOLOGIES AG , compliant EAR99
SIA432DJ-T1-GE3
Vishay Intertechnologies
$0.7406 Yes Active N-CHANNEL YES SINGLE 3 1 12 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 19.2 W S-PDSO-C3 e3 Not Qualified 150 °C 260 PLASTIC/EPOXY SQUARE SMALL OUTLINE MATTE TIN C BEND DUAL VISHAY INTERTECHNOLOGY INC HALOGEN FREE AND ROHS COMPLIANT, SC-70, POWERPAK-6 compliant Vishay
IPD65R1K4CFDBTMA1
Infineon Technologies AG
$0.3863 No Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 650 V 1 2.8 A 1.4 Ω 26 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28.4 W 8.2 A SWITCHING SILICON TO-252 R-PSSO-G2 1 150 °C -55 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE INFINEON TECHNOLOGIES AG , compliant EAR99 Infineon
IPD65R1K4CFDBT
Infineon Technologies AG
Check for Price Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 650 V 1 2.8 A 1.4 Ω 26 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28.4 W 1.8 A SWITCHING SILICON TO-252 R-PSSO-G2 150 °C -55 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE INFINEON TECHNOLOGIES AG DPAK-3/2 unknown EAR99
IPS65R1K4C6
Infineon Technologies AG
Check for Price No Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 650 V 1 3.2 A 1.4 Ω 26 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28 W 8.3 A SWITCHING SILICON TO-251 R-PSIP-T3 e3 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR IN-LINE Tin (Sn) THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG IPAK-3 not_compliant EAR99
TK170V65Z,LQ
Toshiba America Electronic Components
Check for Price Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 650 V 1 18 A 170 mΩ 225 mJ 1.6 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 W 72 A SWITCHING SILICON S-PSSO-N4 150 °C DRAIN PLASTIC/EPOXY SQUARE SMALL OUTLINE NO LEAD SINGLE TOSHIBA CORP unknown EAR99 Toshiba
TK125V65Z,LQ
Toshiba America Electronic Components
Check for Price Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 650 V 1 24 A 125 mΩ 258 mJ 1.9 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 190 W 96 A SWITCHING SILICON S-PSSO-N4 150 °C DRAIN PLASTIC/EPOXY SQUARE SMALL OUTLINE NO LEAD SINGLE TOSHIBA CORP unknown Toshiba