Datasheets
IPC70N04S5L-4R2 by:

Power Bipolar Transistor,

Part Details for IPC70N04S5L-4R2 by Infineon Technologies AG

Overview of IPC70N04S5L-4R2 by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for IPC70N04S5L-4R2

Part # Distributor Description Stock Price Buy
DISTI # IPC70N04S5L4R2
TME Transistor: N-MOSFET, unipolar, 40V, 70A, 50W, PG-TDSON-8 Min Qty: 1 0
  • 1 $0.8180
  • 5 $0.6460
  • 25 $0.6030
  • 100 $0.5600
$0.5600 / $0.8180 RFQ

Part Details for IPC70N04S5L-4R2

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IPC70N04S5L-4R2 Part Data Attributes:

IPC70N04S5L-4R2 Infineon Technologies AG
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IPC70N04S5L-4R2 Infineon Technologies AG Power Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 32 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 70 A
Drain-source On Resistance-Max 0.0061 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 30 pF
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 280 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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