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11 - 20 of 95,886 results
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TK125V65Z,LQ
Toshiba America Electronic Components
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 650 V | 1 | 24 A | 125 mΩ | 258 mJ | 1.9 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 190 W | 96 A | SWITCHING | SILICON | S-PSSO-N4 | 150 °C | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | NO LEAD | SINGLE | TOSHIBA CORP | unknown | Toshiba | |||||||||||||||||||||||||
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2N5488
New Jersey Semiconductor Products Inc
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Check for Price | Active | N-CHANNEL | NO | SINGLE | 3 | 1 | 30 mA | JUNCTION | DEPLETION MODE | SWITCHING | SILICON | TO-5 | O-MBCY-W3 | 200 °C | -65 °C | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | CYLINDRICAL, O-MBCY-W3 | EAR99 | |||||||||||||||||||||||||||||
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BU806
SPC Multicomp
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$1.4040 | Active | 200 V | 8 A | N-CHANNEL | NO | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 3 | 1 | 60 W | SWITCHING | SILICON | 1.5 V | TO-220AB | R-PSFM-T3 | 150 °C | -65 °C | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | MULTICOMP PRO | unknown | TO-220, 3 PIN | EAR99 | |||||||||||||||||||||||||||
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TK110Z65Z,S1F
Toshiba America Electronic Components
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Check for Price | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 4 | 650 V | 1 | 24 A | 110 mΩ | 258 mJ | 1.9 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 190 W | 96 A | SWITCHING | SILICON | TO-247 | R-PSFM-T4 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | TOSHIBA CORP | unknown | EAR99 | ||||||||||||||||||||||||
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BU508DF
Comset Semiconductor
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Check for Price | Yes | Contact Manufacturer | 700 V | 8 A | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 | 10 | 7 MHz | 34 W | AMPLIFIER | SILICON | 1 V | R-PSFM-T3 | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | COMSET SEMICONDUCTORS | unknown | FLANGE MOUNT, R-PSFM-T3 | EAR99 | ||||||||||||||||||||||||||
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SIR890DP-T1-GE3
Vishay Siliconix
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$2.0449 | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 20 V | 1 | 30 A | 4 mΩ | 80 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 70 A | SWITCHING | SILICON | R-PDSO-C5 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | VISHAY SILICONIX | unknown | Vishay | SMALL OUTLINE, R-PDSO-C5 | EAR99 | SOIC | 8 | ||||||||||||||||||||
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BUZ330
New Jersey Semiconductor Products Inc
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Check for Price | Active | N-CHANNEL | NO | SINGLE | 3 | 500 V | 1 | 9.5 A | 600 mΩ | AVALANCHE RATED | 670 mJ | 140 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 38 A | SILICON | 600 ns | 190 ns | TO-218AA | R-PSFM-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | unknown | , | EAR99 | 2018-08-03 | ||||||||||||||||||||
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IPP60R1K4C6XKSA1
Infineon Technologies AG
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 3.2 A | 1.4 Ω | 26 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 28.4 W | 8 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | compliant | Infineon | TO-220, 3 PIN | EAR99 | |||||||||||||||||||
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IPD65R1K4CFDATMA2
Infineon Technologies AG
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 650 V | 1 | 2.8 A | 1.4 Ω | 26 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 28.4 W | 8.2 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | compliant | Infineon | , | EAR99 | ||||||||||||||||
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2N4223
Semiconductors Inc
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Check for Price | Contact Manufacturer | N-CHANNEL | NO | JUNCTION | 300 mW | 175 °C | SEMICONDUCTORS INC | unknown | EAR99 |