Parametric results for: Power Bipolar Transistors

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Sorted By: Polarity/Channel Type
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TK125V65Z,LQ
Toshiba America Electronic Components
Check for Price Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 650 V 1 24 A 125 mΩ 258 mJ 1.9 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 190 W 96 A SWITCHING SILICON S-PSSO-N4 150 °C DRAIN PLASTIC/EPOXY SQUARE SMALL OUTLINE NO LEAD SINGLE TOSHIBA CORP unknown Toshiba
2N5488
New Jersey Semiconductor Products Inc
Check for Price Active N-CHANNEL NO SINGLE 3 1 30 mA JUNCTION DEPLETION MODE SWITCHING SILICON TO-5 O-MBCY-W3 200 °C -65 °C METAL ROUND CYLINDRICAL WIRE BOTTOM NEW JERSEY SEMICONDUCTOR PRODUCTS INC unknown CYLINDRICAL, O-MBCY-W3 EAR99
BU806
SPC Multicomp
$1.4040 Active 200 V 8 A N-CHANNEL NO DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 3 1 60 W SWITCHING SILICON 1.5 V TO-220AB R-PSFM-T3 150 °C -65 °C COLLECTOR PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE MULTICOMP PRO unknown TO-220, 3 PIN EAR99
TK110Z65Z,S1F
Toshiba America Electronic Components
Check for Price Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 4 650 V 1 24 A 110 mΩ 258 mJ 1.9 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 190 W 96 A SWITCHING SILICON TO-247 R-PSFM-T4 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE TOSHIBA CORP unknown EAR99
BU508DF
Comset Semiconductor
Check for Price Yes Contact Manufacturer 700 V 8 A N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 1 10 7 MHz 34 W AMPLIFIER SILICON 1 V R-PSFM-T3 150 °C ISOLATED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE COMSET SEMICONDUCTORS unknown FLANGE MOUNT, R-PSFM-T3 EAR99
SIR890DP-T1-GE3
Vishay Siliconix
$2.0449 Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 20 V 1 30 A 4 mΩ 80 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 50 W 70 A SWITCHING SILICON R-PDSO-C5 e3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN C BEND DUAL VISHAY SILICONIX unknown Vishay SMALL OUTLINE, R-PDSO-C5 EAR99 SOIC 8
BUZ330
New Jersey Semiconductor Products Inc
Check for Price Active N-CHANNEL NO SINGLE 3 500 V 1 9.5 A 600 mΩ AVALANCHE RATED 670 mJ 140 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 38 A SILICON 600 ns 190 ns TO-218AA R-PSFM-T3 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE NEW JERSEY SEMICONDUCTOR PRODUCTS INC unknown , EAR99 2018-08-03
IPP60R1K4C6XKSA1
Infineon Technologies AG
Check for Price Yes Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 3.2 A 1.4 Ω 26 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28.4 W 8 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT TIN THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG compliant Infineon TO-220, 3 PIN EAR99
IPD65R1K4CFDATMA2
Infineon Technologies AG
Check for Price Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 650 V 1 2.8 A 1.4 Ω 26 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28.4 W 8.2 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE INFINEON TECHNOLOGIES AG compliant Infineon , EAR99
2N4223
Semiconductors Inc
Check for Price Contact Manufacturer N-CHANNEL NO JUNCTION 300 mW 175 °C SEMICONDUCTORS INC unknown EAR99