Datasheets
TK170V65Z,LQ by: Toshiba America Electronic Components

Power Bipolar Transistor

Part Details for TK170V65Z,LQ by Toshiba America Electronic Components

Overview of TK170V65Z,LQ by Toshiba America Electronic Components

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Price & Stock for TK170V65Z,LQ

Part # Distributor Description Stock Price Buy
DISTI # 264-TK170V65ZLQCT-ND
DigiKey MOSFET N-CH 650V 18A 5DFN Min Qty: 1 Lead time: 24 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 4950
In Stock
  • 1 $3.4300
  • 10 $2.8780
  • 100 $2.3285
  • 500 $2.0698
  • 1,000 $1.7722
  • 2,500 $1.6687
  • 5,000 $1.6500
$1.6500 / $3.4300 Buy Now
DISTI # TK170V65Z,LQ
Avnet Americas Transistor MOSFET N-CH 650V 18A 4-Pin DFN - Tape and Reel (Alt: TK170V65Z,LQ) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days Container: Reel 2500
  • 2,500 $1.5642
  • 5,000 $1.5378
  • 10,000 $1.5114
  • 15,000 $1.4850
  • 20,000 $1.4586
$1.4586 / $1.5642 Buy Now
DISTI # 757-TK170V65ZLQ
Mouser Electronics MOSFET MOSFET 650V 170mOhms DTMOS-VI RoHS: Compliant 4744
  • 1 $3.5300
  • 10 $2.9700
  • 25 $2.8800
  • 100 $2.4000
  • 250 $2.3300
  • 500 $2.1400
  • 1,000 $1.8300
  • 2,500 $1.7100
$1.7100 / $3.5300 Buy Now
DISTI # TK170V65Z,LQ
Avnet Americas Transistor MOSFET N-CH 650V 18A 4-Pin DFN - Tape and Reel (Alt: TK170V65Z,LQ) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days Container: Reel 2500
  • 2,500 $1.5642
  • 5,000 $1.5378
  • 10,000 $1.5114
  • 15,000 $1.4850
  • 20,000 $1.4586
$1.4586 / $1.5642 Buy Now

Part Details for TK170V65Z,LQ

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TK170V65Z,LQ Part Data Attributes:

TK170V65Z,LQ Toshiba America Electronic Components
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TK170V65Z,LQ Toshiba America Electronic Components Power Bipolar Transistor
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 225 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.17 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1.6 pF
JESD-30 Code S-PSSO-N4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 72 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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