Part Details for IPS65R1K4C6AKMA1 by Infineon Technologies AG
Overview of IPS65R1K4C6AKMA1 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPS65R1K4C6AKMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | IPS65R1K4C6 Series 650 V 3.2 A CoolMOS™ C6 Power Transistor - PG-TO-251-3 RoHS: Compliant pbFree: Yes Min Qty: 75 Package Multiple: 1500 Container: Tube | 100Tube |
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$0.3150 / $0.3400 | Buy Now |
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Bristol Electronics | 1500 |
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RFQ | ||
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Quest Components | 1200 |
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$0.5040 / $1.2600 | Buy Now | |
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Rochester Electronics | IPS65R1K4 - 650V and 700V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 237706 |
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$0.4249 / $0.4999 | Buy Now |
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DISTI #
IPS65R1K4C6AKMA1
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TME | Transistor: N-MOSFET, unipolar, 650V, 3.2A, 28W, IPAK SL Min Qty: 1 | 0 |
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$0.4420 / $0.7430 | RFQ |
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DISTI #
2480867
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.7672 / $1.5122 | Buy Now |
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DISTI #
2480867
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Farnell | MOSFET, N-CH, 650V, 3.2A, TO-251-3 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each | 0 |
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$0.8195 / $1.4117 | Buy Now |
Part Details for IPS65R1K4C6AKMA1
IPS65R1K4C6AKMA1 CAD Models
IPS65R1K4C6AKMA1 Part Data Attributes:
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IPS65R1K4C6AKMA1
Infineon Technologies AG
Buy Now
Datasheet
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IPS65R1K4C6AKMA1
Infineon Technologies AG
Power Bipolar Transistor,
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | IPAK-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 26 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 3.2 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 28 W | |
| Pulsed Drain Current-Max (IDM) | 8.3 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |