Part Details for IPS65R1K4C6 by Infineon Technologies AG
Overview of IPS65R1K4C6 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPS65R1K4C6
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | MOSFET N-CH 650V 3.2A TO-251 | 6000 |
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RFQ |
Part Details for IPS65R1K4C6
IPS65R1K4C6 CAD Models
IPS65R1K4C6 Part Data Attributes:
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IPS65R1K4C6
Infineon Technologies AG
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Datasheet
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IPS65R1K4C6
Infineon Technologies AG
Power Bipolar Transistor,
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | IPAK-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 26 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 3.2 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 28 W | |
| Pulsed Drain Current-Max (IDM) | 8.3 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |