Part Details for IPD65R1K4CFDBTMA1 by Infineon Technologies AG
Overview of IPD65R1K4CFDBTMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPD65R1K4CFDBTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPD65R1K4CFDBTMA1
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TME | Transistor: N-MOSFET, unipolar, 650V, 2.8A, 28.4W, PG-TO252-3 Min Qty: 1 | 0 |
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$0.4840 / $0.8070 | RFQ |
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Chip1Cloud | MOSFET N-CH 650V 2.8A TO-252 | 3230 |
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RFQ |
Part Details for IPD65R1K4CFDBTMA1
IPD65R1K4CFDBTMA1 CAD Models
IPD65R1K4CFDBTMA1 Part Data Attributes:
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IPD65R1K4CFDBTMA1
Infineon Technologies AG
Buy Now
Datasheet
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IPD65R1K4CFDBTMA1
Infineon Technologies AG
Power Bipolar Transistor,
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 26 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 2.8 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 28.4 W | |
| Pulsed Drain Current-Max (IDM) | 8.2 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD65R1K4CFDBTMA1
This table gives cross-reference parts and alternative options found for IPD65R1K4CFDBTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD65R1K4CFDBTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD65R1K4CFD | Power Bipolar Transistor | Infineon Technologies AG | IPD65R1K4CFDBTMA1 vs IPD65R1K4CFD |
| IPD65R1K4CFDATMA1 | Power Field-Effect Transistor, 2.8A I(D), 650V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | Infineon Technologies AG | IPD65R1K4CFDBTMA1 vs IPD65R1K4CFDATMA1 |
| IPD65R1K4CFDAT | Power Bipolar Transistor | Infineon Technologies AG | IPD65R1K4CFDBTMA1 vs IPD65R1K4CFDAT |