Datasheets
BSM100GAL120DN2 by:

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF BRIDGE GAL 2, 7 PIN

Part Details for BSM100GAL120DN2 by Infineon Technologies AG

Overview of BSM100GAL120DN2 by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

Part Details for BSM100GAL120DN2

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BSM100GAL120DN2 Part Data Attributes:

BSM100GAL120DN2 Infineon Technologies AG
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BSM100GAL120DN2 Infineon Technologies AG Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF BRIDGE GAL 2, 7 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description HALF BRIDGE GAL 2, 7 PIN
Pin Count 5
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 150 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 1
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 800 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 470 ns
Turn-on Time-Nom (ton) 210 ns
VCEsat-Max 3.2 V

Alternate Parts for BSM100GAL120DN2

This table gives cross-reference parts and alternative options found for BSM100GAL120DN2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM100GAL120DN2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSM100GAL120DN2 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel Siemens BSM100GAL120DN2 vs BSM100GAL120DN2
Part Number Description Manufacturer Compare
APTGT200DA120D3G Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc BSM100GAL120DN2 vs APTGT200DA120D3G
BSM150GAL120DLC Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG BSM100GAL120DN2 vs BSM150GAL120DLC
BSM200GAL120DL Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE Eupec Gmbh & Co Kg BSM100GAL120DN2 vs BSM200GAL120DL
GP200MKS12 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel Dynex Semiconductor BSM100GAL120DN2 vs GP200MKS12
GP200MLS12 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel Dynex Semiconductor BSM100GAL120DN2 vs GP200MLS12
BSM150GAL120DN2 Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel Siemens BSM100GAL120DN2 vs BSM150GAL120DN2
BSM100GAL120DLCK Insulated Gate Bipolar Transistor, 205A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG BSM100GAL120DN2 vs BSM100GAL120DLCK
CM100E3U-24H Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, Mitsubishi Electric BSM100GAL120DN2 vs CM100E3U-24H
BSM150GAL120DN2 Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG BSM100GAL120DN2 vs BSM150GAL120DN2
BSM100GAL120DN2 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel Siemens BSM100GAL120DN2 vs BSM100GAL120DN2

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