BSM100GAL120DN2 vs BSM150GAL120DLC feature comparison

BSM100GAL120DN2 Infineon Technologies AG

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BSM150GAL120DLC Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code MODULE MODULE
Package Description HALF BRIDGE GAL 2, 7 PIN MODULE-5
Pin Count 5 5
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Case Connection ISOLATED ISOLATED
Collector Current-Max (IC) 150 A 300 A
Collector-Emitter Voltage-Max 1200 V 1200 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V 20 V
JESD-30 Code R-XUFM-X7 R-XUFM-X5
Number of Elements 1 1
Number of Terminals 7 5
Operating Temperature-Max 150 °C 125 °C
Package Body Material UNSPECIFIED UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 800 W 1200 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form UNSPECIFIED UNSPECIFIED
Terminal Position UPPER UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 470 ns 650 ns
Turn-on Time-Nom (ton) 210 ns 190 ns
VCEsat-Max 3.2 V 2.6 V
Base Number Matches 2 2

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