BSM100GAL120DN2
vs
BSM150GAL120DN2
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
SIEMENS A G
|
| Part Package Code |
MODULE
|
|
| Package Description |
HALF BRIDGE GAL 2, 7 PIN
|
FLANGE MOUNT, R-CUFM-X7
|
| Pin Count |
5
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Collector Current-Max (IC) |
150 A
|
210 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| Gate-Emitter Voltage-Max |
20 V
|
20 V
|
| JESD-30 Code |
R-XUFM-X7
|
R-CUFM-X7
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
7
|
7
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
UNSPECIFIED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
800 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
| Terminal Position |
UPPER
|
UPPER
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
POWER CONTROL
|
GENERAL PURPOSE
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
470 ns
|
600 ns
|
| Turn-on Time-Nom (ton) |
210 ns
|
200 ns
|
| VCEsat-Max |
3.2 V
|
3 V
|
| Base Number Matches |
2
|
2
|
| HTS Code |
|
8541.29.00.95
|
| Fall Time-Max (tf) |
|
100 ns
|
| Gate-Emitter Thr Voltage-Max |
|
6.5 V
|
| Power Dissipation Ambient-Max |
|
1250 W
|
| Rise Time-Max (tr) |
|
200 ns
|
| Turn-off Time-Max (toff) |
|
800 ns
|
| Turn-on Time-Max (ton) |
|
400 ns
|
|
|
|
Compare BSM100GAL120DN2 with alternatives
Compare BSM150GAL120DN2 with alternatives