Part Details for SI4966DY by Vishay Siliconix
Overview of SI4966DY by Vishay Siliconix
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for SI4966DY
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 105 |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 3 |
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Buy Now |
Part Details for SI4966DY
SI4966DY CAD Models
SI4966DY Part Data Attributes
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SI4966DY
Vishay Siliconix
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Datasheet
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SI4966DY
Vishay Siliconix
Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SILICONIX INC | |
| Part Package Code | SOT | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 7.1 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for SI4966DY
This table gives cross-reference parts and alternative options found for SI4966DY. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4966DY, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDS6875 | Dual P-Channel 2.5V Specified PowerTrench™ MOSFET -20V, -6A, 30mΩ, 2500-REEL | onsemi | SI4966DY vs FDS6875 |
| MMDF4207R2 | 4.8A, 20V, 0.033ohm, P-CHANNEL, Si, POWER, MOSFET, SO-8 | Motorola Mobility LLC | SI4966DY vs MMDF4207R2 |
| FDS9933BZ | 4.9A, 20V, 0.046ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8 | Rochester Electronics LLC | SI4966DY vs FDS9933BZ |
| FDS6890AD84Z | Power Field-Effect Transistor, 7.5A I(D), 20V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4966DY vs FDS6890AD84Z |
| FDS9933BZ | -20V Dual P-Channel 2.5V Specified PowerTrench® MOSFET, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL | Fairchild Semiconductor Corporation | SI4966DY vs FDS9933BZ |
| SI4966DY-T1-E3 | Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8 | Vishay Intertechnologies | SI4966DY vs SI4966DY-T1-E3 |
| FDS6890A | Power Field-Effect Transistor, 7.5A I(D), 20V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4966DY vs FDS6890A |
| FDS6890AL99Z | Power Field-Effect Transistor, 7.5A I(D), 20V, 0.019ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | SI4966DY vs FDS6890AL99Z |
| SI4963DY-T1 | Power Field-Effect Transistor, 4.6A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Vishay Siliconix | SI4966DY vs SI4963DY-T1 |
| SI4963DY | Transistor, | Vishay Siliconix | SI4966DY vs SI4963DY |