Datasheets
MMDF4207R2 by:

4.8A, 20V, 0.033ohm, P-CHANNEL, Si, POWER, MOSFET, SO-8

Part Details for MMDF4207R2 by Motorola Mobility LLC

Overview of MMDF4207R2 by Motorola Mobility LLC

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Part Details for MMDF4207R2

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MMDF4207R2 Part Data Attributes:

MMDF4207R2 Motorola Mobility LLC
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MMDF4207R2 Motorola Mobility LLC 4.8A, 20V, 0.033ohm, P-CHANNEL, Si, POWER, MOSFET, SO-8
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 500 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 4.8 A
Drain-source On Resistance-Max 0.033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MMDF4207R2

This table gives cross-reference parts and alternative options found for MMDF4207R2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF4207R2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6875 6A, 20V, 0.03ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SOIC-8 Rochester Electronics LLC MMDF4207R2 vs FDS6875
SI4963DY-T1 Power Field-Effect Transistor, 4.6A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix MMDF4207R2 vs SI4963DY-T1
SI4966DY-T1-E3 Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Vishay Siliconix MMDF4207R2 vs SI4966DY-T1-E3
FDS6875 Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation MMDF4207R2 vs FDS6875
FDS6875_NL Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation MMDF4207R2 vs FDS6875_NL
FDS6890A 7.5A, 20V, 0.034ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SOIC-8 Rochester Electronics LLC MMDF4207R2 vs FDS6890A
SI4963DY 6.2A, 20V, 0.033ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC MMDF4207R2 vs SI4963DY
FDS6890AF011 Power Field-Effect Transistor, 7.5A I(D), 20V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation MMDF4207R2 vs FDS6890AF011
SI4966DY-T1-E3 Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8 Vishay Intertechnologies MMDF4207R2 vs SI4966DY-T1-E3
FDS9933BZ -20V Dual P-Channel 2.5V Specified PowerTrench® MOSFET, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL Fairchild Semiconductor Corporation MMDF4207R2 vs FDS9933BZ

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