Part Details for SI4966DY-T1-E3 by Vishay Intertechnologies
Overview of SI4966DY-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for SI4966DY-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
06J8013
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Newark | Dual N Channel Mosfet, 20V, Soic, Full Reel, Transistor Polarity:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:7.1A, On Resistance Rds(On):0.025Ohm, Transistor Mounting:Surface Mount, Power Dissipation Pd:2W Rohs Compliant: Yes |Vishay SI4966DY-T1-E3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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Bristol Electronics | 1666 |
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RFQ | ||
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DISTI #
SMC-SI4966DY-T1-E3
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Sensible Micro Corporation | Ic, Mosfet Dual N-Channel 2.5 V 7.1A 2W So-8 RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Container: Tape & Reel | 2458 |
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RFQ | |
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Chip1Cloud | MOSFET 2N-CH 20V 8SOIC | 7000 |
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RFQ |
Part Details for SI4966DY-T1-E3
SI4966DY-T1-E3 CAD Models
SI4966DY-T1-E3 Part Data Attributes:
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SI4966DY-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4966DY-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | MS-012, SOIC-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 7.1 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |
Alternate Parts for SI4966DY-T1-E3
This table gives cross-reference parts and alternative options found for SI4966DY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4966DY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI4966DY-T1-E3 | Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Vishay Siliconix | SI4966DY-T1-E3 vs SI4966DY-T1-E3 |