SI4966DY vs FDS9933BZ feature comparison

SI4966DY Vishay Siliconix

Buy Now Datasheet

FDS9933BZ Rochester Electronics LLC

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer SILICONIX INC ROCHESTER ELECTRONICS LLC
Part Package Code SOT SOT
Pin Count 8 8
Reach Compliance Code unknown unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 7.1 A 4.9 A
Drain-source On Resistance-Max 0.025 Ω 0.046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e0 e3
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A 30 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES YES
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
Pbfree Code Yes
Package Description ROHS COMPLIANT, SOP-8
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING

Compare SI4966DY with alternatives

Compare FDS9933BZ with alternatives