Datasheets
FDS9933BZ by:

4.9A, 20V, 0.046ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8

Part Details for FDS9933BZ by Rochester Electronics LLC

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Part Details for FDS9933BZ

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FDS9933BZ Part Data Attributes:

FDS9933BZ Rochester Electronics LLC
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FDS9933BZ Rochester Electronics LLC 4.9A, 20V, 0.046ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code SOT
Package Description ROHS COMPLIANT, SOP-8
Pin Count 8
Reach Compliance Code unknown
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 4.9 A
Drain-source On Resistance-Max 0.046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS9933BZ

This table gives cross-reference parts and alternative options found for FDS9933BZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS9933BZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS9933BZ -20V Dual P-Channel 2.5V Specified PowerTrench® MOSFET, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL Fairchild Semiconductor Corporation FDS9933BZ vs FDS9933BZ
Part Number Description Manufacturer Compare
FDS6875 6A, 20V, 0.03ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SOIC-8 Rochester Electronics LLC FDS9933BZ vs FDS6875
SI4963DY-T1 Power Field-Effect Transistor, 4.6A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix FDS9933BZ vs SI4963DY-T1
SI4966DY-T1-E3 Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Vishay Siliconix FDS9933BZ vs SI4966DY-T1-E3
FDS6875 Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS9933BZ vs FDS6875
FDS6875_NL Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS9933BZ vs FDS6875_NL
FDS6890A 7.5A, 20V, 0.034ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SOIC-8 Rochester Electronics LLC FDS9933BZ vs FDS6890A
SI4963DY 6.2A, 20V, 0.033ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC FDS9933BZ vs SI4963DY
FDS6890AF011 Power Field-Effect Transistor, 7.5A I(D), 20V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS9933BZ vs FDS6890AF011
SI4966DY-T1-E3 Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8 Vishay Intertechnologies FDS9933BZ vs SI4966DY-T1-E3
FDS9933BZ -20V Dual P-Channel 2.5V Specified PowerTrench® MOSFET, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL Fairchild Semiconductor Corporation FDS9933BZ vs FDS9933BZ

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