Part Details for FDS9933BZ by Fairchild Semiconductor Corporation
Overview of FDS9933BZ by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDS9933BZ
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | FDS9933 - Power Field-Effect Transistor, 4.9A, 20V, 0.046ohm, 2-Element, P-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 17170 |
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$0.4351 / $0.5119 | Buy Now |
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Chip1Cloud | MOSFET 2P-CH 20V 4.9A 8-SOIC | 2340 |
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RFQ |
Part Details for FDS9933BZ
FDS9933BZ CAD Models
FDS9933BZ Part Data Attributes:
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FDS9933BZ
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDS9933BZ
Fairchild Semiconductor Corporation
-20V Dual P-Channel 2.5V Specified PowerTrench® MOSFET, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOIC | |
| Package Description | ROHS COMPLIANT, SOP-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.9 A | |
| Drain-source On Resistance-Max | 0.046 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDS9933BZ
This table gives cross-reference parts and alternative options found for FDS9933BZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS9933BZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDS6875 | 6A, 20V, 0.03ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SOIC-8 | Rochester Electronics LLC | FDS9933BZ vs FDS6875 |
| SI4963DY-T1 | Power Field-Effect Transistor, 4.6A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Vishay Siliconix | FDS9933BZ vs SI4963DY-T1 |
| SI4966DY-T1-E3 | Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Vishay Siliconix | FDS9933BZ vs SI4966DY-T1-E3 |
| FDS6875 | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | FDS9933BZ vs FDS6875 |
| FDS6875_NL | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | FDS9933BZ vs FDS6875_NL |
| FDS6890A | 7.5A, 20V, 0.034ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SOIC-8 | Rochester Electronics LLC | FDS9933BZ vs FDS6890A |
| SI4963DY | 6.2A, 20V, 0.033ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 | Rochester Electronics LLC | FDS9933BZ vs SI4963DY |
| FDS6890AF011 | Power Field-Effect Transistor, 7.5A I(D), 20V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | FDS9933BZ vs FDS6890AF011 |
| SI4966DY-T1-E3 | Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8 | Vishay Intertechnologies | FDS9933BZ vs SI4966DY-T1-E3 |
| MMDF4207R2 | 4.8A, 20V, 0.033ohm, P-CHANNEL, Si, POWER, MOSFET, SO-8 | Motorola Mobility LLC | FDS9933BZ vs MMDF4207R2 |