Part Details for IRF840S by International Rectifier
Overview of IRF840S by International Rectifier
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF840S
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 170 |
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RFQ | ||
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Bristol Electronics | Min Qty: 3 | 290 |
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$0.6000 / $1.8750 | Buy Now |
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Quest Components | 232 |
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$0.7500 / $2.5000 | Buy Now | |
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Quest Components | 136 |
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$3.8332 / $6.2160 | Buy Now | |
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Chip 1 Exchange | INSTOCK | 902 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 28 |
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$1.5000 / $2.3100 | Buy Now |
Part Details for IRF840S
IRF840S CAD Models
IRF840S Part Data Attributes
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IRF840S
International Rectifier
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Datasheet
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IRF840S
International Rectifier
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | D2PAK | |
| Package Description | TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.85 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 240 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF840S
This table gives cross-reference parts and alternative options found for IRF840S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF840STRRPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF840S vs IRF840STRRPBF |
| IRF840S | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF840S vs IRF840S |
| IRF840SPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF840S vs IRF840SPBF |
| IRF840S | TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | IRF840S vs IRF840S |
| IRF840SPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Vishay Intertechnologies | IRF840S vs IRF840SPBF |
| IRF840S | 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF840S vs IRF840S |
| IRF840S | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | IRF840S vs IRF840S |
| IRF840STRR | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF840S vs IRF840STRR |
| IRF840STRLPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Vishay Intertechnologies | IRF840S vs IRF840STRLPBF |
| IRF840S | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Intertechnologies | IRF840S vs IRF840S |