Part Details for MTB8N50E by onsemi
Overview of MTB8N50E by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for MTB8N50E
MTB8N50E CAD Models
MTB8N50E Part Data Attributes:
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MTB8N50E
onsemi
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Datasheet
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MTB8N50E
onsemi
8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-02, D2PAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 418B-02 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 510 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MTB8N50E
This table gives cross-reference parts and alternative options found for MTB8N50E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTB8N50E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK1316(S)TR | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Hitachi Ltd | MTB8N50E vs 2SK1316(S)TR |
| STB8NA50T4 | 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN | STMicroelectronics | MTB8N50E vs STB8NA50T4 |
| 2SK1316(S)TL | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Hitachi Ltd | MTB8N50E vs 2SK1316(S)TL |
| IRF840STRRPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | MTB8N50E vs IRF840STRRPBF |
| 2SK1504-01S | Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fuji Electric Co Ltd | MTB8N50E vs 2SK1504-01S |
| STB9NB50-1 | 8.6A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, 3 PIN | STMicroelectronics | MTB8N50E vs STB9NB50-1 |
| IRF840STRL | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | MTB8N50E vs IRF840STRL |
| 2SK1540STL-E | 7A, 450V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3 | Renesas Electronics Corporation | MTB8N50E vs 2SK1540STL-E |
| 2SK1540S | 7A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | MTB8N50E vs 2SK1540S |
| STB8NC50 | 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | MTB8N50E vs STB8NC50 |