Datasheets
PHB8N50E by:

TRANSISTOR 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-404, 3 PIN, FET General Purpose Power

Part Details for PHB8N50E by NXP Semiconductors

Overview of PHB8N50E by NXP Semiconductors

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech)

Part Details for PHB8N50E

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PHB8N50E Part Data Attributes:

PHB8N50E NXP Semiconductors
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PHB8N50E NXP Semiconductors TRANSISTOR 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-404, 3 PIN, FET General Purpose Power
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOT
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Manufacturer Package Code SOT404
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 531 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8.5 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 34 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PHB8N50E

This table gives cross-reference parts and alternative options found for PHB8N50E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHB8N50E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SK1316(S)TR Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Hitachi Ltd PHB8N50E vs 2SK1316(S)TR
STB8NA50T4 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN STMicroelectronics PHB8N50E vs STB8NA50T4
2SK1316(S)TL Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Hitachi Ltd PHB8N50E vs 2SK1316(S)TL
IRF840STRRPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix PHB8N50E vs IRF840STRRPBF
2SK1504-01S Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fuji Electric Co Ltd PHB8N50E vs 2SK1504-01S
STB9NB50-1 8.6A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, 3 PIN STMicroelectronics PHB8N50E vs STB9NB50-1
IRF840STRL Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier PHB8N50E vs IRF840STRL
2SK1540STL-E 7A, 450V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3 Renesas Electronics Corporation PHB8N50E vs 2SK1540STL-E
2SK1540S 7A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 Renesas Electronics Corporation PHB8N50E vs 2SK1540S
STB8NC50 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 STMicroelectronics PHB8N50E vs STB8NC50

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