Datasheets
FS10VS-10 by:

Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

Part Details for FS10VS-10 by Powerex Power Semiconductors

Overview of FS10VS-10 by Powerex Power Semiconductors

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Part Details for FS10VS-10

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FS10VS-10 Part Data Attributes:

FS10VS-10 Powerex Power Semiconductors
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FS10VS-10 Powerex Power Semiconductors Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer POWEREX INC
Part Package Code TO-220S
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FS10VS-10

This table gives cross-reference parts and alternative options found for FS10VS-10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FS10VS-10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FS10VS-10 Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Mitsubishi Electric FS10VS-10 vs FS10VS-10
Part Number Description Manufacturer Compare
2SK1316(S)TR Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Hitachi Ltd FS10VS-10 vs 2SK1316(S)TR
STB8NA50T4 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN STMicroelectronics FS10VS-10 vs STB8NA50T4
2SK1316(S)TL Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Hitachi Ltd FS10VS-10 vs 2SK1316(S)TL
IRF840STRRPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix FS10VS-10 vs IRF840STRRPBF
2SK1504-01S Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fuji Electric Co Ltd FS10VS-10 vs 2SK1504-01S
STB9NB50-1 8.6A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, 3 PIN STMicroelectronics FS10VS-10 vs STB9NB50-1
IRF840STRL Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier FS10VS-10 vs IRF840STRL
2SK1540STL-E 7A, 450V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3 Renesas Electronics Corporation FS10VS-10 vs 2SK1540STL-E
2SK1540S 7A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 Renesas Electronics Corporation FS10VS-10 vs 2SK1540S
STB8NC50 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 STMicroelectronics FS10VS-10 vs STB8NC50

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