Part Details for BSP318SL6327HTSA1 by Infineon Technologies AG
Overview of BSP318SL6327HTSA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSP318SL6327HTSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BSP318SL6327HTSA1
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Avnet Americas | MOSFET N-CH 60V 2.6A SOT-223 - Tape and Reel (Alt: BSP318SL6327HTSA1) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1000 Container: Reel | 0 |
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RFQ | |
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Rochester Electronics | BSP318 - SIPMOS Small-Signal N-Channel MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 4920425 |
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$0.1952 / $0.2297 | Buy Now |
DISTI #
BSP318SL6327HTSA1
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Avnet Americas | MOSFET N-CH 60V 2.6A SOT-223 - Tape and Reel (Alt: BSP318SL6327HTSA1) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1000 Container: Reel | 0 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 60V 2.6A SOT-223 | 137830 |
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$0.7540 / $1.1310 | Buy Now |
Part Details for BSP318SL6327HTSA1
BSP318SL6327HTSA1 CAD Models
BSP318SL6327HTSA1 Part Data Attributes:
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BSP318SL6327HTSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSP318SL6327HTSA1
Infineon Technologies AG
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 60 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 2.6 A | |
Drain-source On Resistance-Max | 0.15 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 10.4 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for BSP318SL6327HTSA1
This table gives cross-reference parts and alternative options found for BSP318SL6327HTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP318SL6327HTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFM014AS62Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BSP318SL6327HTSA1 vs IRFM014AS62Z |
NDT014LL84Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BSP318SL6327HTSA1 vs NDT014LL84Z |
BUK78150-55115 | TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | BSP318SL6327HTSA1 vs BUK78150-55115 |
BUK582-60AT/R | TRANSISTOR 2.5 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-4, FET General Purpose Power | NXP Semiconductors | BSP318SL6327HTSA1 vs BUK582-60AT/R |
NDT014LJ23ZD84Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BSP318SL6327HTSA1 vs NDT014LJ23ZD84Z |
NDT014LD84Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BSP318SL6327HTSA1 vs NDT014LD84Z |
SP001058838 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | BSP318SL6327HTSA1 vs SP001058838 |
BUK78150-55,135 | 2.6A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | BSP318SL6327HTSA1 vs BUK78150-55,135 |
BSP318SH6327XTSA1 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP318SL6327HTSA1 vs BSP318SH6327XTSA1 |
BSP318SL6327 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP318SL6327HTSA1 vs BSP318SL6327 |