BSP318SL6327HTSA1 vs NDT014LJ23ZD84Z feature comparison

BSP318SL6327HTSA1 Infineon Technologies AG

Buy Now Datasheet

NDT014LJ23ZD84Z Fairchild Semiconductor Corporation

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG FAIRCHILD SEMICONDUCTOR CORP
Package Description GREEN, PLASTIC PACKAGE-4 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 60 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 2.6 A 2.8 A
Drain-source On Resistance-Max 0.15 Ω 0.16 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 4 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 10.4 A 10 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Qualification Status Not Qualified
Transistor Application SWITCHING

Compare BSP318SL6327HTSA1 with alternatives

Compare NDT014LJ23ZD84Z with alternatives