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Transistors / Power Field-Effect Transistors / BSP318SH6327XTSA1
Datasheets
BSP318SH6327XTSA1 by:

Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

Part Details for BSP318SH6327XTSA1 by Infineon Technologies AG

Overview of BSP318SH6327XTSA1 by Infineon Technologies AG

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Price & Stock for BSP318SH6327XTSA1

Part # Distributor Description Stock Price Buy
DISTI # 68AC4421
Newark Mosfet, N-Ch, 60V, 2.6A, Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Infineon BSP318SH6327XTSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 321
  • 1 $0.9390
  • 10 $0.7810
  • 25 $0.7260
  • 50 $0.6730
  • 100 $0.6190
  • 250 $0.5770
  • 500 $0.5330
$0.5330 / $0.9390 Buy Now
DISTI # 87AK5511
Newark Mosfet, N-Ch, 2.6A, Sot-223-4 Rohs Compliant: Yes |Infineon BSP318SH6327XTSA1 Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 1,000 $0.4320
  • 2,000 $0.4210
  • 4,000 $0.4120
  • 6,000 $0.4040
  • 10,000 $0.3870
$0.3870 / $0.4320 Buy Now
DISTI # BSP318SH6327XTSA1CT-ND
DigiKey MOSFET N-CH 60V 2.6A SOT223-4 Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1845
In Stock
  • 1 $0.8500
  • 10 $0.6980
  • 100 $0.5430
  • 500 $0.4602
  • 1,000 $0.3749
  • 2,000 $0.3529
  • 5,000 $0.3361
  • 10,000 $0.3206
  • 25,000 $0.3200
$0.3200 / $0.8500 Buy Now
DISTI # V36:1790_06392024
Arrow Electronics Trans MOSFET N-CH 60V 2.6A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 98 Weeks Date Code: 2329 Americas - 1000
  • 1,000 $0.2849
  • 2,000 $0.2723
  • 5,000 $0.2696
  • 10,000 $0.2585
$0.2585 / $0.2849 Buy Now
Future Electronics Single N-Channel 60 V 90 mOhm 14 nC SIPMOS® Small Signal Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Container: Reel 144000
Reel
  • 1,000 $0.2850
  • 2,000 $0.2800
  • 3,000 $0.2750
  • 4,000 $0.2750
  • 5,000 $0.2650
$0.2650 / $0.2850 Buy Now
Future Electronics Single N-Channel 60 V 90 mOhm 14 nC SIPMOS® Small Signal Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Container: Reel 0
Reel
  • 1,000 $0.3100
  • 2,000 $0.3050
  • 3,000 $0.3000
  • 4,000 $0.3000
  • 5,000 $0.2900
$0.2900 / $0.3100 Buy Now
DISTI # 78813074
Verical Trans MOSFET N-CH 60V 2.6A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Date Code: 2329 Americas - 1000
  • 1,000 $0.2849
  • 2,000 $0.2723
  • 5,000 $0.2696
  • 10,000 $0.2585
$0.2585 / $0.2849 Buy Now
DISTI # 63398224
Verical Trans MOSFET N-CH 60V 2.6A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant Min Qty: 43 Package Multiple: 1 Americas - 140
  • 43 $0.7350
  • 50 $0.6263
  • 100 $0.5363
$0.5363 / $0.7350 Buy Now
NexGen Digital   3
RFQ
DISTI # SMC-BSP318SH6327XTSA1
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 93448
RFQ
Chip 1 Exchange INSTOCK 46000
RFQ
Chip-Germany GmbH   RoHS: Compliant Min Qty: 1000 Date Code: 22+ Container: Reel 3809
RFQ
Chip1Cloud MOSFET N-CH 60V 2.6A 14700
RFQ
DISTI # C1S322000898103
Chip1Stop Trans MOSFET N-CH 60V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 140
  • 5 $0.7870
  • 10 $0.5880
  • 50 $0.5010
  • 100 $0.4290
$0.4290 / $0.7870 Buy Now
CHIPMALL.COM LIMITED Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting , ADAS , body control units , SMPS and motor control . 1679
  • 1 $0.3113
$0.3113 Buy Now
Win Source Electronics MOSFET N-CH 60V 2.6A 103000
  • 40 $1.3570
  • 90 $1.1140
  • 140 $1.0790
  • 195 $1.0440
  • 250 $1.0090
  • 335 $0.9050
$0.9050 / $1.3570 Buy Now

Part Details for BSP318SH6327XTSA1

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BSP318SH6327XTSA1 Part Data Attributes

Parametric Data
BSP318SH6327XTSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSP318SH6327XTSA1 Infineon Technologies AG Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 60 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 2.6 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 10.4 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON

Alternate Parts for BSP318SH6327XTSA1

This table gives cross-reference parts and alternative options found for BSP318SH6327XTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP318SH6327XTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFM014AS62Z Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation BSP318SH6327XTSA1 vs IRFM014AS62Z
BUK78150-55135 TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BSP318SH6327XTSA1 vs BUK78150-55135
BSP318SL6327HTSA1 Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP318SH6327XTSA1 vs BSP318SL6327HTSA1
BUK582-60AT/R TRANSISTOR 2.5 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-4, FET General Purpose Power NXP Semiconductors BSP318SH6327XTSA1 vs BUK582-60AT/R
BSP318SH6327 Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP318SH6327XTSA1 vs BSP318SH6327
SP001058838 Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG BSP318SH6327XTSA1 vs SP001058838
BUK78150-55115 TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BSP318SH6327XTSA1 vs BUK78150-55115
IRFM014AL99Z Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation BSP318SH6327XTSA1 vs IRFM014AL99Z

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