Part Details for BUK78150-55,135 by NXP Semiconductors
Overview of BUK78150-55,135 by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Automotive
Part Details for BUK78150-55,135
BUK78150-55,135 CAD Models
BUK78150-55,135 Part Data Attributes
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BUK78150-55,135
NXP Semiconductors
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Datasheet
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BUK78150-55,135
NXP Semiconductors
2.6A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | ESD PROTECTION | |
| Avalanche Energy Rating (Eas) | 15 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 2.6 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BUK78150-55,135
This table gives cross-reference parts and alternative options found for BUK78150-55,135. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK78150-55,135, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUK78150-55,115 | 2.6A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | BUK78150-55,135 vs BUK78150-55,115 |
| BUK582-60AT/R | TRANSISTOR 2.5 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-4, FET General Purpose Power | NXP Semiconductors | BUK78150-55,135 vs BUK582-60AT/R |
| BUK78150-55115 | TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | BUK78150-55,135 vs BUK78150-55115 |
| IRFM014AL99Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BUK78150-55,135 vs IRFM014AL99Z |
| NDT014LL84Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BUK78150-55,135 vs NDT014LL84Z |
| NDT014LJ23ZD84Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BUK78150-55,135 vs NDT014LJ23ZD84Z |
| IRFM014AD84Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BUK78150-55,135 vs IRFM014AD84Z |
| BSP318SH6327 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BUK78150-55,135 vs BSP318SH6327 |
| NDT014LD84Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BUK78150-55,135 vs NDT014LD84Z |
| BSP318SL6327 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BUK78150-55,135 vs BSP318SL6327 |