BSP318SL6327HTSA1 vs BUK582-60AT/R feature comparison

BSP318SL6327HTSA1 Infineon Technologies AG

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BUK582-60AT/R NXP Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG NXP SEMICONDUCTORS
Package Description GREEN, PLASTIC PACKAGE-4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 60 mJ 30 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 2.6 A 2.5 A
Drain-source On Resistance-Max 0.15 Ω 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 10.4 A 10 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pin Count 4
Feedback Cap-Max (Crss) 100 pF
Qualification Status Not Qualified
Transistor Application SWITCHING
Turn-off Time-Max (toff) 140 ns
Turn-on Time-Max (ton) 100 ns

Compare BSP318SL6327HTSA1 with alternatives

Compare BUK582-60AT/R with alternatives