BSP318SL6327HTSA1 vs SP001058838 feature comparison

BSP318SL6327HTSA1 Infineon Technologies AG

Buy Now Datasheet

SP001058838 Infineon Technologies AG

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC PACKAGE-4
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE AVALANCHE RATED
Avalanche Energy Rating (Eas) 60 mJ 60 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 2.6 A 2.6 A
Drain-source On Resistance-Max 0.15 Ω 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 10.4 A 10.4 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Operating Temperature-Min -55 °C
Reference Standard AEC-Q101

Compare BSP318SL6327HTSA1 with alternatives

Compare SP001058838 with alternatives