Part Details for IRFM014AS62Z by Fairchild Semiconductor Corporation
Overview of IRFM014AS62Z by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFM014AS62Z
IRFM014AS62Z CAD Models
IRFM014AS62Z Part Data Attributes:
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IRFM014AS62Z
Fairchild Semiconductor Corporation
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Datasheet
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IRFM014AS62Z
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 67 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 2.8 A | |
Drain-source On Resistance-Max | 0.14 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 22 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFM014AS62Z
This table gives cross-reference parts and alternative options found for IRFM014AS62Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM014AS62Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUK78150-55,115 | 2.6A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | IRFM014AS62Z vs BUK78150-55,115 |
BUK582-60AT/R | TRANSISTOR 2.5 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-4, FET General Purpose Power | NXP Semiconductors | IRFM014AS62Z vs BUK582-60AT/R |
NDT014LL84Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRFM014AS62Z vs NDT014LL84Z |
BSP318SL6327 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | IRFM014AS62Z vs BSP318SL6327 |
BSP318SL6327HTSA1 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | IRFM014AS62Z vs BSP318SL6327HTSA1 |
BUK78150-55135 | TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IRFM014AS62Z vs BUK78150-55135 |
BSP318SH6327 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | IRFM014AS62Z vs BSP318SH6327 |
IRFM014AL99Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRFM014AS62Z vs IRFM014AL99Z |
BUK78150-55115 | TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IRFM014AS62Z vs BUK78150-55115 |
BUK78150-55,135 | 2.6A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | IRFM014AS62Z vs BUK78150-55,135 |