Part Details for NDT014LJ23ZD84Z by Fairchild Semiconductor Corporation
Overview of NDT014LJ23ZD84Z by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for NDT014LJ23ZD84Z
NDT014LJ23ZD84Z CAD Models
NDT014LJ23ZD84Z Part Data Attributes
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NDT014LJ23ZD84Z
Fairchild Semiconductor Corporation
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Datasheet
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NDT014LJ23ZD84Z
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 2.8 A | |
Drain-source On Resistance-Max | 0.16 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 10 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for NDT014LJ23ZD84Z
This table gives cross-reference parts and alternative options found for NDT014LJ23ZD84Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDT014LJ23ZD84Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFM014AS62Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | NDT014LJ23ZD84Z vs IRFM014AS62Z |
BUK78150-55135 | TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | NDT014LJ23ZD84Z vs BUK78150-55135 |
BSP318SL6327HTSA1 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | NDT014LJ23ZD84Z vs BSP318SL6327HTSA1 |
BUK582-60AT/R | TRANSISTOR 2.5 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-4, FET General Purpose Power | NXP Semiconductors | NDT014LJ23ZD84Z vs BUK582-60AT/R |
BSP318SH6327 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | NDT014LJ23ZD84Z vs BSP318SH6327 |
SP001058838 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | NDT014LJ23ZD84Z vs SP001058838 |
BSP318SH6327XTSA1 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | NDT014LJ23ZD84Z vs BSP318SH6327XTSA1 |
BUK78150-55115 | TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | NDT014LJ23ZD84Z vs BUK78150-55115 |
IRFM014AL99Z | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | NDT014LJ23ZD84Z vs IRFM014AL99Z |