Datasheets
NDT014LJ23ZD84Z by: Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for NDT014LJ23ZD84Z by Fairchild Semiconductor Corporation

Overview of NDT014LJ23ZD84Z by Fairchild Semiconductor Corporation

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Applications Education and Research Internet of Things (IoT) Industrial Automation Computing and Data Storage Aerospace and Defense Healthcare Renewable Energy Telecommunications Automotive Robotics and Drones

Part Details for NDT014LJ23ZD84Z

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NDT014LJ23ZD84Z Part Data Attributes

NDT014LJ23ZD84Z Fairchild Semiconductor Corporation
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NDT014LJ23ZD84Z Fairchild Semiconductor Corporation Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 2.8 A
Drain-source On Resistance-Max 0.16 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NDT014LJ23ZD84Z

This table gives cross-reference parts and alternative options found for NDT014LJ23ZD84Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDT014LJ23ZD84Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFM014AS62Z Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT014LJ23ZD84Z vs IRFM014AS62Z
BUK78150-55135 TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors NDT014LJ23ZD84Z vs BUK78150-55135
BSP318SL6327HTSA1 Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG NDT014LJ23ZD84Z vs BSP318SL6327HTSA1
BUK582-60AT/R TRANSISTOR 2.5 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-4, FET General Purpose Power NXP Semiconductors NDT014LJ23ZD84Z vs BUK582-60AT/R
BSP318SH6327 Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG NDT014LJ23ZD84Z vs BSP318SH6327
SP001058838 Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG NDT014LJ23ZD84Z vs SP001058838
BSP318SH6327XTSA1 Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG NDT014LJ23ZD84Z vs BSP318SH6327XTSA1
BUK78150-55115 TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors NDT014LJ23ZD84Z vs BUK78150-55115
IRFM014AL99Z Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT014LJ23ZD84Z vs IRFM014AL99Z

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