Datasheets
W947D2HBJX5E by:

DDR DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90

Part Details for W947D2HBJX5E by Winbond Electronics Corp

Overview of W947D2HBJX5E by Winbond Electronics Corp

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for W947D2HBJX5E

Part # Distributor Description Stock Price Buy
NAC 128Mb LPDDR, x32, 200MHz, VFBGA90 Package RoHS: Compliant Min Qty: 240 Package Multiple: 240 0
  • 240 $2.4800
  • 1,200 $2.3600
$2.3600 / $2.4800 Buy Now

Part Details for W947D2HBJX5E

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W947D2HBJX5E Part Data Attributes:

W947D2HBJX5E Winbond Electronics Corp
Buy Now Datasheet
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W947D2HBJX5E Winbond Electronics Corp DDR DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer WINBOND ELECTRONICS CORP
Part Package Code BGA
Package Description 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90
Pin Count 90
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Samacsys Manufacturer Winbond
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8,16
JESD-30 Code R-PBGA-B90
Length 13 mm
Memory Density 134217728 bit
Memory IC Type LPDDR1 DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -25 °C
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.025 mm
Self Refresh YES
Sequential Burst Length 2,4,8,16
Standby Current-Max 0.00001 A
Supply Current-Max 0.075 mA
Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm

Alternate Parts for W947D2HBJX5E

This table gives cross-reference parts and alternative options found for W947D2HBJX5E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W947D2HBJX5E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT46H4M32LFB5-54:K DDR DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc W947D2HBJX5E vs MT46H4M32LFB5-54:K
IS43LR32400D-5BLI DDR DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-90 Integrated Silicon Solution Inc W947D2HBJX5E vs IS43LR32400D-5BLI
MT46H4M32LFB5-54IT:K DDR DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc W947D2HBJX5E vs MT46H4M32LFB5-54IT:K
W948D2FBJX5E DDR DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 Winbond Electronics Corp W947D2HBJX5E vs W948D2FBJX5E
IS43LR32400D-5BL DDR DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-90 Integrated Silicon Solution Inc W947D2HBJX5E vs IS43LR32400D-5BL
Part Number Description Manufacturer Compare
K4S28323LE-HL1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor W947D2HBJX5E vs K4S28323LE-HL1H0
MT46H8M32LGB5-5AT:H DDR DRAM, 8MX32, 5ns, CMOS, PBGA90, 10 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc W947D2HBJX5E vs MT46H8M32LGB5-5AT:H
K4M56323LE-ES800 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 Samsung Semiconductor W947D2HBJX5E vs K4M56323LE-ES800
K4M56323LG-HF600 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor W947D2HBJX5E vs K4M56323LG-HF600
K4S283233E-FC1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90 Samsung Semiconductor W947D2HBJX5E vs K4S283233E-FC1H0
K4M56323LD-EU80 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor W947D2HBJX5E vs K4M56323LD-EU80
HY5MS5B2LF-S DDR DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-90 SK Hynix Inc W947D2HBJX5E vs HY5MS5B2LF-S
EDS2732CABB-75L-E Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Elpida Memory Inc W947D2HBJX5E vs EDS2732CABB-75L-E
K4S28323LE-HL750 Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor W947D2HBJX5E vs K4S28323LE-HL750
MT46H8M32LGCM-54:H DDR DRAM, 8MX32, 5ns, CMOS, PBGA90 Micron Technology Inc W947D2HBJX5E vs MT46H8M32LGCM-54:H

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