Part Details for HY5MS5B2LF-S by SK Hynix Inc
Overview of HY5MS5B2LF-S by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Entertainment and Gaming
Part Details for HY5MS5B2LF-S
HY5MS5B2LF-S CAD Models
HY5MS5B2LF-S Part Data Attributes:
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HY5MS5B2LF-S
SK Hynix Inc
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Datasheet
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HY5MS5B2LF-S
SK Hynix Inc
DDR DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-90
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | BGA | |
| Package Description | VFBGA, BGA90,9X15,32 | |
| Pin Count | 90 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 100 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PBGA-B90 | |
| Length | 13 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -25 °C | |
| Organization | 8MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | VFBGA | |
| Package Equivalence Code | BGA90,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL EXTENDED | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 8 mm |
Alternate Parts for HY5MS5B2LF-S
This table gives cross-reference parts and alternative options found for HY5MS5B2LF-S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY5MS5B2LF-S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4M56323LE-EC1H0 | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 | Samsung Semiconductor | HY5MS5B2LF-S vs K4M56323LE-EC1H0 |
| K4S283233E-FN1L0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90 | Samsung Semiconductor | HY5MS5B2LF-S vs K4S283233E-FN1L0 |
| EDS2732CABJ-1A-E | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Elpida Memory Inc | HY5MS5B2LF-S vs EDS2732CABJ-1A-E |
| MT46H8M32LFB5-5IT:H | DDR DRAM, 8MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 | Micron Technology Inc | HY5MS5B2LF-S vs MT46H8M32LFB5-5IT:H |
| K4M28323LH-HG750 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | HY5MS5B2LF-S vs K4M28323LH-HG750 |
| K4S28323LE-FS1H0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90 | Samsung Semiconductor | HY5MS5B2LF-S vs K4S28323LE-FS1H0 |
| HY5W2A2LF-P | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 | SK Hynix Inc | HY5MS5B2LF-S vs HY5W2A2LF-P |
| K4M563233G-FN750 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | HY5MS5B2LF-S vs K4M563233G-FN750 |
| K4M56323LE-EE800 | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 | Samsung Semiconductor | HY5MS5B2LF-S vs K4M56323LE-EE800 |
| IS42S32800B-7BLI | Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, BGA-90 | Integrated Silicon Solution Inc | HY5MS5B2LF-S vs IS42S32800B-7BLI |