Part Details for K4M56323LD-EU80 by Samsung Semiconductor
Overview of K4M56323LD-EU80 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for K4M56323LD-EU80
K4M56323LD-EU80 CAD Models
K4M56323LD-EU80 Part Data Attributes:
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K4M56323LD-EU80
Samsung Semiconductor
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Datasheet
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K4M56323LD-EU80
Samsung Semiconductor
Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | LFBGA, BGA90,9X15,32 | |
| Pin Count | 90 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 125 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PBGA-B90 | |
| Length | 13 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -25 °C | |
| Organization | 8MX32 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LFBGA | |
| Package Equivalence Code | BGA90,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.45 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.0012 A | |
| Supply Current-Max | 0.3 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 11 mm |
Alternate Parts for K4M56323LD-EU80
This table gives cross-reference parts and alternative options found for K4M56323LD-EU80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4M56323LD-EU80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4M56323LE-ES80 | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4M56323LD-EU80 vs K4M56323LE-ES80 |
| K4M56323LE-MS80 | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4M56323LD-EU80 vs K4M56323LE-MS80 |
| K4M56323LE-ME80 | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4M56323LD-EU80 vs K4M56323LE-ME80 |
| K4M56323LD-EG80 | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4M56323LD-EU80 vs K4M56323LD-EG80 |
| K4M56323LE-EN80 | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4M56323LD-EU80 vs K4M56323LE-EN80 |
| K4M56323LD-MS80 | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4M56323LD-EU80 vs K4M56323LD-MS80 |
| K4M56323LD-ES80 | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4M56323LD-EU80 vs K4M56323LD-ES80 |
| K4M56323LE-EE80 | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | K4M56323LD-EU80 vs K4M56323LE-EE80 |
| K4M56323LD-MU80 | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4M56323LD-EU80 vs K4M56323LD-MU80 |
| K4M56323LD-EN80 | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | K4M56323LD-EU80 vs K4M56323LD-EN80 |