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Transistors / Power Field-Effect Transistors / STP11NM60
Datasheets
STP11NM60 by:

N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh II Power MOSFET in a TO-220 package

Part Details for STP11NM60 by STMicroelectronics

Overview of STP11NM60 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

Price & Stock for STP11NM60

Part # Distributor Description Stock Price Buy
DISTI # 45AC7687
Newark Mosfet, N-Ch, 600V, 11A, To-220Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:11A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.4Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipationrohs Compliant: Yes |Stmicroelectronics STP11NM60 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 678
  • 1 $4.7100
  • 10 $4.0000
  • 25 $3.9400
  • 50 $3.6200
  • 100 $3.2600
  • 250 $2.7100
  • 500 $2.5600
$2.5600 / $4.7100 Buy Now
DISTI # 89K1608
Newark N Channel Mosfet, 650V, 11A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:11A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Stmicroelectronics STP11NM60 Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 500 $2.9300
$2.9300 Buy Now
DISTI # 497-2773-5-ND
DigiKey MOSFET N-CH 650V 11A TO220AB Min Qty: 1 Lead time: 13 Weeks Container: Tube 277
In Stock
  • 1 $4.0800
  • 50 $3.2336
  • 100 $2.7717
  • 500 $2.4638
  • 1,000 $2.1096
  • 2,000 $1.9864
  • 5,000 $1.9058
$1.9058 / $4.0800 Buy Now
DISTI # STP11NM60
Avnet Americas Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP11NM60) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube 0
  • 1,000 $2.2640
  • 2,000 $2.2183
  • 4,000 $2.1726
  • 6,000 $2.1268
  • 8,000 $2.0811
  • 10,000 $2.0353
  • 100,000 $1.9896
$1.9896 / $2.2640 Buy Now
DISTI # 511-STP11NM60
Mouser Electronics MOSFET N-Ch 600 Volt 11 Amp RoHS: Compliant 745
  • 1 $4.0800
  • 10 $3.4300
  • 25 $3.3700
  • 100 $2.7800
  • 250 $2.7300
  • 500 $2.5200
  • 1,000 $2.1000
  • 2,000 $1.9800
$1.9800 / $4.0800 Buy Now
STMicroelectronics N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh II Power MOSFET in a D2PAK package RoHS: Compliant Min Qty: 1 745
  • 1 $4.0000
  • 10 $3.3600
  • 25 $3.3000
  • 100 $2.7200
  • 250 $2.6800
  • 500 $2.4700
$2.4700 / $4.0000 Buy Now
Future Electronics N-Channel 650 V 0.45 Ohm Flange Mount MDmesh™ Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Box 0
Box
  • 1,000 $2.0000
  • 2,000 $1.9500
$1.9500 / $2.0000 Buy Now
Future Electronics N-Channel 650 V 0.45 Ohm Flange Mount MDmesh™ Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Box 0
Box
  • 1,000 $2.0000
  • 2,000 $1.9500
$1.9500 / $2.0000 Buy Now
Bristol Electronics   19
RFQ
Bristol Electronics   200
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-220AB 361
  • 1 $4.2882
  • 94 $1.8582
  • 270 $1.7153
$1.7153 / $4.2882 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 15
  • 1 $3.4230
  • 4 $2.8525
  • 10 $2.5102
$2.5102 / $3.4230 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 72
  • 1 $4.2882
  • 8 $3.1447
  • 25 $2.8588
$2.8588 / $4.2882 Buy Now
DISTI # STP11NM60
Avnet Americas Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP11NM60) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube 0
  • 1,000 $2.2640
  • 2,000 $2.2183
  • 4,000 $2.1726
  • 6,000 $2.1268
  • 8,000 $2.0811
  • 10,000 $2.0353
  • 100,000 $1.9896
$1.9896 / $2.2640 Buy Now
DISTI # STP11NM60
TME Transistor: N-MOSFET, unipolar, 600V, 11A, Idm: 44A, 160W, TO220-3 Min Qty: 1 47
  • 1 $2.5800
  • 5 $2.3200
  • 25 $2.0500
  • 100 $1.8400
  • 500 $1.7200
$1.7200 / $2.5800 Buy Now
Chip 1 Exchange INSTOCK 100
RFQ
DISTI # STP11NM60
Avnet Silica Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube (Alt: STP11NM60) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 0 Days Silica - 200
Buy Now
Chip1Cloud N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?Power MOSFET | MOSFET N-CH 650V 11A TO-220 6080
RFQ
DISTI # STP11NM60
EBV Elektronik Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube (Alt: STP11NM60) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 2807277
element14 Asia-Pacific MOSFET, N-CH, 600V, 11A, TO-220AB RoHS: Compliant Min Qty: 1 Container: Each 678
  • 1 $4.3079
  • 10 $3.5098
  • 100 $2.8448
  • 500 $2.6601
  • 1,000 $2.2167
$2.2167 / $4.3079 Buy Now
DISTI # 2807277
Farnell MOSFET, N-CH, 600V, 11A, TO-220AB RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 678
  • 1 $4.5713
  • 10 $3.3405
  • 100 $2.7001
  • 500 $2.5242
  • 1,000 $2.1098
$2.1098 / $4.5713 Buy Now

Part Details for STP11NM60

STP11NM60 CAD Models

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STP11NM60 Part Data Attributes:

Parametric Data
STP11NM60 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STP11NM60 STMicroelectronics N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh II Power MOSFET in a TO-220 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Date Of Intro 1980-01-04
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 350 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STP11NM60

This table gives cross-reference parts and alternative options found for STP11NM60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP11NM60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
F10F6N Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN Shindengen Electronic Manufacturing Co Ltd STP11NM60 vs F10F6N
NDP606BE 42A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN Texas Instruments STP11NM60 vs NDP606BE
STP9NK65Z N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET STMicroelectronics STP11NM60 vs STP9NK65Z
IXFH12N100F Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation STP11NM60 vs IXFH12N100F
IPD90N06S306ATMA1 Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN Infineon Technologies AG STP11NM60 vs IPD90N06S306ATMA1
FQA30N40 Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Fairchild Semiconductor Corporation STP11NM60 vs FQA30N40
SSP10N60B Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation STP11NM60 vs SSP10N60B
BUK9614-30 69A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET NXP Semiconductors STP11NM60 vs BUK9614-30
FDP8878 Power Field-Effect Transistor, 40A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Fairchild Semiconductor Corporation STP11NM60 vs FDP8878
FQPF6N80 Power Field-Effect Transistor, 3.3A I(D), 800V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN Fairchild Semiconductor Corporation STP11NM60 vs FQPF6N80

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