STP11NM60 vs IPD90N06S306ATMA1 feature comparison

STP11NM60 STMicroelectronics

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IPD90N06S306ATMA1 Infineon Technologies AG

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer STMICROELECTRONICS INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description TO-220, 3 PIN GREEN, TO-252, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 13 Weeks
Date Of Intro 1980-01-04
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 350 mJ 250 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 55 V
Drain Current-Max (ID) 11 A 90 A
Drain-source On Resistance-Max 0.45 Ω 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-252AA
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 44 A 360 A
Qualification Status Not Qualified
Surface Mount NO YES
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 10 1
Additional Feature ULTRA LOW RESISTANCE
Case Connection DRAIN

Compare STP11NM60 with alternatives

Compare IPD90N06S306ATMA1 with alternatives