Datasheets
BUK9614-30 by:

69A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET

Part Details for BUK9614-30 by NXP Semiconductors

Overview of BUK9614-30 by NXP Semiconductors

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Part Details for BUK9614-30

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BUK9614-30 Part Data Attributes:

BUK9614-30 NXP Semiconductors
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BUK9614-30 NXP Semiconductors 69A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature ESD PROTECTED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 69 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 240 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BUK9614-30

This table gives cross-reference parts and alternative options found for BUK9614-30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK9614-30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
934057024118 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 NXP Semiconductors BUK9614-30 vs 934057024118
STD3NA50T4 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics BUK9614-30 vs STD3NA50T4
IXFH68N20 Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, IXYS Corporation BUK9614-30 vs IXFH68N20
IRF620B Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation BUK9614-30 vs IRF620B
SPA16N50C3 Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN Infineon Technologies AG BUK9614-30 vs SPA16N50C3
STD7NK30Z 5A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 STMicroelectronics BUK9614-30 vs STD7NK30Z
IXFH32N50Q Power Field-Effect Transistor, 32A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN IXYS Corporation BUK9614-30 vs IXFH32N50Q
IPD06N03LBG Power Field-Effect Transistor, 50A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN Infineon Technologies AG BUK9614-30 vs IPD06N03LBG
NP90N055VUG-E1-AY Power MOSFETs for Automotive, MP-3ZP, /Embossed Tape Renesas Electronics Corporation BUK9614-30 vs NP90N055VUG-E1-AY
FDP8878 Power Field-Effect Transistor, 40A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Fairchild Semiconductor Corporation BUK9614-30 vs FDP8878

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