STP11NM60 vs BUK9614-30 feature comparison

STP11NM60 STMicroelectronics

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BUK9614-30 NXP Semiconductors

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer STMICROELECTRONICS NXP SEMICONDUCTORS
Part Package Code TO-220AB
Package Description TO-220, 3 PIN SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 13 Weeks
Date Of Intro 1980-01-04
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 350 mJ 125 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 30 V
Drain Current-Max (ID) 11 A 69 A
Drain-source On Resistance-Max 0.45 Ω 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 44 A 240 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 10 3
Additional Feature ESD PROTECTED, LOGIC LEVEL COMPATIBLE
Case Connection DRAIN

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