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STP11NM60FP
STMicroelectronics
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$2.0086 | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 11 A | 450 mΩ | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 35 W | 44 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-220AB | TO-220FP, 3 PIN | 3 | not_compliant | EAR99 | STMicroelectronics | ||||||||
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STP11NM60ND
STMicroelectronics
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$2.4118 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 10 A | 450 mΩ | 200 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 40 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-220AB | ROHS COMPLIANT, TO-220, 3 PIN | 3 | not_compliant | EAR99 | STMicroelectronics | |||||||||
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STP11NM60
STMicroelectronics
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$2.6388 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 11 A | 450 mΩ | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 44 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-220AB | TO-220, 3 PIN | 3 | not_compliant | EAR99 | STMicroelectronics | 1980-01-04 | ||||||
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STP11NM60FD
STMicroelectronics
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$3.2815 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 11 A | 450 mΩ | AVALANCHE RATED | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 160 W | 44 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-220AB | ROHS COMPLIANT, TO-220, 3 PIN | 3 | not_compliant | EAR99 | STMicroelectronics | ||||||||
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STP11NM60FDFP
STMicroelectronics
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$3.4530 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 11 A | 450 mΩ | AVALANCHE RATED | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 35 W | 44 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-220AB | ROHS COMPLIANT, TO-220FP, 3 PIN | 3 | not_compliant | EAR99 | STMicroelectronics | |||||||
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STP11NM60AFP
STMicroelectronics
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 11 A | 450 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 35 W | 44 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 1 | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-220AB | TO-220FP, 3 PIN | 3 | not_compliant | EAR99 | ||||||||
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STP11NM60N
STMicroelectronics
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 10 A | 450 mΩ | 200 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 100 W | 40 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-220AB | ROHS COMPLIANT, TO-220, 3 PIN | 3 | not_compliant | EAR99 | ||||||||
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STP11NM60Z
STMicroelectronics
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 11 A | 450 mΩ | AVALANCHE RATED | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 44 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-220AB | FLANGE MOUNT, R-PSFM-T3 | 3 | compliant | EAR99 | |||||||
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STP11NM60ZFP
STMicroelectronics
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 11 A | 450 mΩ | AVALANCHE RATED | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 44 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-220AB | FLANGE MOUNT, R-PSFM-T3 | 3 | compliant | EAR99 | ||||||||
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STP11NM60A
STMicroelectronics
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 11 A | 450 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 44 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-220AB | FLANGE MOUNT, R-PSFM-T3 | 3 | not_compliant | EAR99 |