Part Details for IXFH12N100F by IXYS Corporation
Overview of IXFH12N100F by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Aerospace and Defense
Electronic Manufacturing
Robotics and Drones
Price & Stock for IXFH12N100F
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47AJ9867
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Newark | Discmsft Nch Hiperfet-Q Class To-247Ad/ Tube Rohs Compliant: Yes |Ixys Semiconductor IXFH12N100F Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$7.1400 / $7.6900 | Buy Now |
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Future Electronics | Single N-Channel TO-247 1000V 12A1050 mOhm Mosfet RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
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$8.6400 / $8.8400 | Buy Now |
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Future Electronics | Single N-Channel TO-247 1000V 12A1050 mOhm Mosfet RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Bulk | 0Bulk |
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$8.6400 / $9.0700 | Buy Now |
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DISTI #
IXFH12N100F
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TTI | MOSFET 12 Amps 1000V 1.05 Rds Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$8.2700 / $8.6100 | Buy Now |
Part Details for IXFH12N100F
IXFH12N100F CAD Models
IXFH12N100F Part Data Attributes:
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IXFH12N100F
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFH12N100F
IXYS Corporation
Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247 | |
| Package Description | PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 1.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH12N100F
This table gives cross-reference parts and alternative options found for IXFH12N100F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH12N100F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF610B_FP001 | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXFH12N100F vs IRF610B_FP001 |
| FDP18N50 | Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXFH12N100F vs FDP18N50 |
| PHD3055L | 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 | NXP Semiconductors | IXFH12N100F vs PHD3055L |
| STH8NA60 | 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | IXFH12N100F vs STH8NA60 |
| STD3NA50T4 | 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STMicroelectronics | IXFH12N100F vs STD3NA50T4 |
| IPP45N06S4L-08 | Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IXFH12N100F vs IPP45N06S4L-08 |
| 934057024118 | 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 | NXP Semiconductors | IXFH12N100F vs 934057024118 |
| IRF620B | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXFH12N100F vs IRF620B |
| SPP80N06S2L-06 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IXFH12N100F vs SPP80N06S2L-06 |
| STP75NF75 | N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package | STMicroelectronics | IXFH12N100F vs STP75NF75 |