Datasheets
MJD112 by:

2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE

Part Details for MJD112 by onsemi

Overview of MJD112 by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for MJD112

Part # Distributor Description Stock Price Buy
Bristol Electronics   325
RFQ
Bristol Electronics   662
RFQ
Quest Components Bipolar Junction Transistor, Darlington, NPN Type, TO-252 30
  • 1 $0.4800
  • 11 $0.4000
$0.4000 / $0.4800 Buy Now
Quest Components Bipolar Junction Transistor, Darlington, NPN Type, TO-252 260
  • 1 $1.0000
  • 26 $0.6000
  • 101 $0.5000
$0.5000 / $1.0000 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 83
  • 1 $1.5400
  • 100 $1.1500
  • 1,000 $1.0000
$1.0000 / $1.5400 Buy Now

Part Details for MJD112

MJD112 CAD Models

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MJD112 Part Data Attributes:

MJD112 onsemi
Buy Now Datasheet
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MJD112 onsemi 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
Pbfree Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code DPAK (SINGLE GAUGE) TO-252
Package Description DPAK-3
Pin Count 3
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 2 A
Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 200
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 25 MHz

Alternate Parts for MJD112

This table gives cross-reference parts and alternative options found for MJD112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MJD112T4 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi MJD112 vs MJD112T4
NJVMJD112G 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, 75-TUBE, Automotive Qualified onsemi MJD112 vs NJVMJD112G
MJD112RLG 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL onsemi MJD112 vs MJD112RLG
MJD112 2A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 STMicroelectronics MJD112 vs MJD112
MJD112-T1 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 Samsung Semiconductor MJD112 vs MJD112-T1
CJD112 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 Central Semiconductor Corp MJD112 vs CJD112
MJD112G 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE onsemi MJD112 vs MJD112G
Part Number Description Manufacturer Compare
MJD112T4 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi MJD112 vs MJD112T4
NJVMJD112G 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, 75-TUBE, Automotive Qualified onsemi MJD112 vs NJVMJD112G
FZT604TC Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN Diodes Incorporated MJD112 vs FZT604TC
FZT605 Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, Wurth Elektronik MJD112 vs FZT605
FZT604TA Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN Diodes Incorporated MJD112 vs FZT604TA
SGS111 2A, 80V, NPN, Si, POWER TRANSISTOR STMicroelectronics MJD112 vs SGS111
UFZT605 Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN Diodes Incorporated MJD112 vs UFZT605
SGS112 2A, 100V, NPN, Si, POWER TRANSISTOR STMicroelectronics MJD112 vs SGS112
MJD112G 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE onsemi MJD112 vs MJD112G
MJD112 2A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 STMicroelectronics MJD112 vs MJD112

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