MJD112
vs
MJD112-T1
feature comparison
| Pbfree Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
DPAK (SINGLE GAUGE) TO-252
|
|
| Package Description |
DPAK-3
|
SMALL OUTLINE, R-PSSO-G2
|
| Pin Count |
3
|
3
|
| Manufacturer Package Code |
369C
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
onsemi
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
2 A
|
2 A
|
| Collector-Emitter Voltage-Max |
100 V
|
100 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
| DC Current Gain-Min (hFE) |
200
|
200
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| JESD-609 Code |
e0
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
235
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
20 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
25 MHz
|
25 MHz
|
| Base Number Matches |
13
|
1
|
| HTS Code |
|
8541.29.00.95
|
| Collector-Base Capacitance-Max |
|
100 pF
|
| Power Dissipation Ambient-Max |
|
20 W
|
| VCEsat-Max |
|
3 V
|
|
|
|
Compare MJD112 with alternatives
Compare MJD112-T1 with alternatives