Datasheets
SGS111 by:

2A, 80V, NPN, Si, POWER TRANSISTOR

Part Details for SGS111 by STMicroelectronics

Overview of SGS111 by STMicroelectronics

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for SGS111

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SGS111 Part Data Attributes

SGS111 STMicroelectronics
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SGS111 STMicroelectronics 2A, 80V, NPN, Si, POWER TRANSISTOR
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Collector Current-Max (IC) 2 A
Collector-Emitter Voltage-Max 80 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 500
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 50 W
Power Dissipation-Max (Abs) 50 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
VCEsat-Max 2.5 V

Alternate Parts for SGS111

This table gives cross-reference parts and alternative options found for SGS111. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGS111, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MJD112T4 Low voltage NPN power Darlington transistor STMicroelectronics SGS111 vs MJD112T4
MJD112T4 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi SGS111 vs MJD112T4
FZT604 Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN Diodes Incorporated SGS111 vs FZT604
KSH112 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 Fairchild Semiconductor Corporation SGS111 vs KSH112
MJD112 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE onsemi SGS111 vs MJD112
CJD112 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 Central Semiconductor Corp SGS111 vs CJD112
UFZT605 Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN Diodes Incorporated SGS111 vs UFZT605
CJD112BK Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, Central Semiconductor Corp SGS111 vs CJD112BK
FZT605 Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, Wurth Elektronik SGS111 vs FZT605
SGS110 2A, 60V, NPN, Si, POWER TRANSISTOR STMicroelectronics SGS111 vs SGS110

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