Datasheets
SGS112 by:

2A, 100V, NPN, Si, POWER TRANSISTOR

Part Details for SGS112 by STMicroelectronics

Overview of SGS112 by STMicroelectronics

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Applications Education and Research Environmental Monitoring Industrial Automation Transportation and Logistics Agriculture Technology Electronic Manufacturing Renewable Energy Automotive Robotics and Drones

Part Details for SGS112

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SGS112 Part Data Attributes:

SGS112 STMicroelectronics
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SGS112 STMicroelectronics 2A, 100V, NPN, Si, POWER TRANSISTOR
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Collector Current-Max (IC) 2 A
Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 500
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 50 W
Power Dissipation-Max (Abs) 50 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
VCEsat-Max 2.5 V

Alternate Parts for SGS112

This table gives cross-reference parts and alternative options found for SGS112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGS112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MJD112RLG 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL onsemi SGS112 vs MJD112RLG
MJD112-T1 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 Samsung Semiconductor SGS112 vs MJD112-T1
CJD112BK Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, Central Semiconductor Corp SGS112 vs CJD112BK
CJD112 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 Central Semiconductor Corp SGS112 vs CJD112
FZT604TA Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN Diodes Incorporated SGS112 vs FZT604TA
FZT604 Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN Diodes Incorporated SGS112 vs FZT604
FZT604 Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, Wurth Elektronik SGS112 vs FZT604
FZT604TC Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN Diodes Incorporated SGS112 vs FZT604TC
MJD6036 4A, 80V, NPN, Si, POWER TRANSISTOR, CASE 369A-13, DPAK-3 onsemi SGS112 vs MJD6036
KSH112 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 Fairchild Semiconductor Corporation SGS112 vs KSH112

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