Part Details for IS61SF12832-10B by Integrated Silicon Solution Inc
Overview of IS61SF12832-10B by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Part Details for IS61SF12832-10B
IS61SF12832-10B CAD Models
IS61SF12832-10B Part Data Attributes:
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IS61SF12832-10B
Integrated Silicon Solution Inc
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Datasheet
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IS61SF12832-10B
Integrated Silicon Solution Inc
Cache SRAM, 128KX32, 10ns, CMOS, PBGA119, PLASTIC, BGA-119
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Part Package Code | BGA | |
| Package Description | PLASTIC, BGA-119 | |
| Pin Count | 119 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 10 ns | |
| Additional Feature | SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PBGA-B119 | |
| JESD-609 Code | e0 | |
| Length | 22 mm | |
| Memory Density | 4194304 bit | |
| Memory IC Type | CACHE SRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Terminals | 119 | |
| Number of Words | 131072 words | |
| Number of Words Code | 128000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 128KX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | BGA | |
| Package Equivalence Code | BGA119,7X17,50 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 2.41 mm | |
| Standby Current-Max | 0.005 A | |
| Standby Voltage-Min | 3.14 V | |
| Supply Current-Max | 0.275 mA | |
| Supply Voltage-Max (Vsup) | 3.63 V | |
| Supply Voltage-Min (Vsup) | 3.135 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | BALL | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | BOTTOM | |
| Width | 14 mm |
Alternate Parts for IS61SF12832-10B
This table gives cross-reference parts and alternative options found for IS61SF12832-10B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS61SF12832-10B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AS7C33128NTD36A-200BC | ZBT SRAM, 128KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100 | Alliance Semiconductor Corporation | IS61SF12832-10B vs AS7C33128NTD36A-200BC |
| IS61DDP2B21M18A-550M3 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165 | Integrated Silicon Solution Inc | IS61SF12832-10B vs IS61DDP2B21M18A-550M3 |
| CY7C1386FV25-250BGI | Cache SRAM, 512KX36, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119 | Cypress Semiconductor | IS61SF12832-10B vs CY7C1386FV25-250BGI |
| CY7C1383AV25-100AC | Standard SRAM, 1MX18, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Cypress Semiconductor | IS61SF12832-10B vs CY7C1383AV25-100AC |
| MCM69L738ZP9R | Late-Write SRAM, 128KX36, 10.5ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 | Motorola Semiconductor Products | IS61SF12832-10B vs MCM69L738ZP9R |
| K7Q163682A-FC13 | QDR SRAM, 512KX36, 3ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165 | Samsung Semiconductor | IS61SF12832-10B vs K7Q163682A-FC13 |
| 71V3576YS150BGGI | Cache SRAM, 128KX36, 3.8ns, CMOS, PBGA119, ROHS COMPLIANT, BGA-119 | Integrated Device Technology Inc | IS61SF12832-10B vs 71V3576YS150BGGI |
| K7I161884B-FC16 | DDR SRAM, 1MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | IS61SF12832-10B vs K7I161884B-FC16 |
| IS61VF25618A-7.5B2 | Cache SRAM, 256KX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119 | Integrated Silicon Solution Inc | IS61SF12832-10B vs IS61VF25618A-7.5B2 |
| IS61NVP25618A-200B2 | ZBT SRAM, 256KX18, 3.1ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119 | Integrated Silicon Solution Inc | IS61SF12832-10B vs IS61NVP25618A-200B2 |